アイテス List of Products and Services

EPMA analysis has good energy resolution and detection sensitivity, and is particularly excellent for quantitative analysis of trace components and map analysis. It can accommodate sizes of 100×100 mm, allowing for the acquisition of extensive maps. In the example of foreign substance analysis on indium-tin oxide thin films, it showed better energy resolution, detection limits, and PB ratios compared to SEM-EDX. Additionally, it enables the detection of trace elements and analyses that are difficult to perform with SEM-EDX. 【Features】 ■ Good energy resolution and detection sensitivity ■ Particularly excels in quantitative analysis of trace components and map analysis ■ Wide-ranging mapping possible due to movable stage ■ Can accommodate sizes of 100×100 mm *For more details, please refer to the PDF document or feel free to contact us.

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EPMA analysis has good energy resolution and detection sensitivity, and is particularly excellent for quantitative analysis of trace components and map analysis. In a case where a defect occurred in the Au-1st bonding within the package, EDX analysis and EPMA analysis were conducted to identify the corrosive substances and confirm their distribution. Since EPMA has superior resolution, detection limits, and P/B (peak to background) ratios compared to EDX, the distribution of trace Cl could be clearly understood. 【Equipment Specifications】 ■ Manufacturer: JEOL Ltd. Jeol-8200 ■ Analysis Method: Wavelength Dispersive X-ray Analysis (WDX) ■ Analyzable Elements: B to U ■ Energy Resolution: 20 eV (EDX is approximately 130 eV) ■ Detection Limit: 0.01% and above ■ Maximum Sample Size: 100×100 mm *For more details, please refer to the PDF document or feel free to contact us.

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In the state analysis using EPMA, changes (shifts and shapes) in the characteristic X-ray peak wavelengths due to differences in the chemical bonding states (ionic valence, crystal structure, coordination number) of oxides and silicates are utilized to estimate the bonding states by comparing with standard spectra. In the identification of two types of copper oxides, when distinguishing between black CuO and red Cu2O by color is difficult, especially for microscopic objects that require an electron microscope, it is possible to grasp the oxidation state using EPMA. Additionally, while XPS is effective for measuring thin oxide layers on aluminum surfaces, EPMA can be used to understand the oxidation state of small foreign particles, bulk materials, and composites. 【Device Specifications】 ■ Manufacturer: JEOL Ltd. Jeol-8200 ■ Analysis Method: Wavelength Dispersive X-ray Analysis (WDX) ■ Analyzable Elements: B to U ■ Energy Resolution: 20 eV (EDX is approximately 130 eV) ■ Detection Limit: 0.01% and above ■ Maximum Sample Size: 100x100 mm *For more details, please refer to the PDF document or feel free to contact us.

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We conducted observations, elemental analysis, and EBSD analysis on the fracture area of the crab hook that was damaged due to long-term use. The elemental analysis using EDX showed that the mapping analysis revealed the distribution of Sb at the grain boundaries of the Pb crystals. Additionally, the EBSD method allowed us to confirm the orientation and misorientation of the crystal grains. [Analysis Summary] ■ Elemental Analysis by EDX - The mapping analysis revealed the distribution of Sb at the grain boundaries of the Pb crystals. ■ Analysis by EBSD - The EBSD method enabled us to confirm the orientation and misorientation of the crystal grains. *For more details, please refer to the PDF document or feel free to contact us.

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The CCD camera module is composed of a complex structure that integrates electronic and mechanical technologies, including sensors, control elements, and AF drive mechanisms, all within a small housing. Additionally, a variety of materials such as metal, glass, and resin are used, making cross-section preparation quite challenging. Our company can produce cross-sections of such high-difficulty samples with advanced technology. 【Cross-section of CCD Camera Module】 ■ Multiple lenses and filters are built into the small housing ■ Products with AF functionality also incorporate mechanisms for focus adjustment and control elements *For more details, please refer to the PDF document or feel free to contact us.

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We would like to introduce a case study of defect analysis using X-ray observation of an AC adapter. Upon observing an AC adapter with unstable output using an X-ray observation device (YXLON Cheetah EVO), a disconnection point was discovered. During fluoroscopic observation, no abnormalities were found in the internal components or solder joints, but a location suspected of disconnection was identified at the base of the wiring. Non-destructive X-ray observation is effective for initial inspections. [Defect Analysis Case Study] ■ Subject: AC Adapter ■ Equipment Used: X-ray Observation Device (YXLON Cheetah EVO) ■ Disconnection Point: Wire Base *For more details, please refer to the PDF document or feel free to contact us.

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We are pleased to announce the launch of our MEMS processing services / MEMS foundry services. At Omron's Yasu facility in Yasu City, Shiga Prefecture, which boasts the largest 8-inch MEMS line in Japan, we will respond to various customer needs from prototype wafer processing to mass production. URL: https://www.ites.co.jp/wafer/foundry.html ■ Features - Prototyping based on customer design specifications - Participation in prototyping from the product design stage with process proposals - Establishment of mass production lines - Launch of a second fab to enhance production capacity - Rapid setup from prototyping to mass production in a seamless manner *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

This document introduces a case study on whiskers that occurred on the lead terminals of IC packages, where cross-sections were created through mechanical polishing, followed by SEM observation and EBSD analysis. It includes surface SEM images of the IC package as well as cross-sectional SEM images. It is evident that the crystal grains and grain boundaries measured by the EBSD method are consistent. We invite you to read it. 【Published Case Studies】 ■Observation/Cross-section preparation ■Analysis using EBSD *For more details, please refer to the PDF document or feel free to contact us.

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This document presents case studies on the analysis of low molecular weight organic acids using ion chromatography. In addition to Cl-, Br-, and SO4^2-, ion chromatography can also detect certain organic substances. As a case study, we provide examples of measuring low molecular weight organic acids in an anion exchange mode. We encourage you to read it. 【Published Cases】 ■ Lactic acid, acetic acid, propionic acid, formic acid ■ Acrylic acid, methacrylic acid ■ Benzoic acid *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment
• Measurement and Analysis Equipment

Back Surface OBIRCH / As a preprocessing step for luminescence analysis or back surface luminescence analysis, we perform back surface polishing of samples with various shapes. This is an essential preprocessing step for conducting analysis from the back surface. By analyzing from the back surface, it is possible not only to detect luminescence while retaining defects but also to observe the presence or absence of shape abnormalities. Additionally, back surface polishing can be performed on various forms of semiconductors, such as packages, opened chips, and wafers, and it is also possible to perform back surface polishing while preserving the lead terminals. 【Features】 ■ Back surface analysis requires polishing because it does not transmit light due to shading by electrodes or light attenuation from high-density substrates. ■ Luminescence can be detected while retaining defects. ■ The presence or absence of shape abnormalities can also be observed. ■ Back surface polishing can be performed while preserving the lead terminals. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

In our "LED Failure Analysis," we conduct failure analysis of LEDs using advanced sample preparation techniques and semiconductor failure analysis equipment to investigate the causes of non-lighting and brightness degradation. In the "LED Defect Mode Isolation," we performed lighting tests after lens polishing and observed the resin of the LED, polishing it to stages a, b, and c, conducting lighting observations for (a) and (b), and optical observations of the chip through the resin for (c). Additionally, we also have categories such as "electrically normal," "open, high resistance," etc. 【Initial Diagnosis Items for LED Packages】 ■ Electrical characteristic measurement ■ Appearance observation ■ Lens polishing/package internal optical observation ■ Lighting test (brightness distribution observation) *For more details, please refer to the PDF materials or feel free to contact us.

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Although they are different materials, if they have similar molecular structures, there is potential for the development and expansion of composite products due to their compatibility and similar properties. However, while they are similar, there are also pitfalls. For example, differences in linear thermal expansion coefficients can lead to stress and displacement at their interface, and cases of delamination are not uncommon. This document presents a case study that elucidates the differences in linear thermal expansion coefficients of PET and PEN films, which have similar main chain structures, and the mechanisms that produce these differences. [Contents] - About materials PET and PEN - XPS analysis (comparison of bonding states) - TMA analysis (comparison of linear thermal expansion coefficients) - Data analysis *For more details, please refer to the PDF document or feel free to contact us.

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Our "Ultra-Micro Hardness Measurement for Material Evaluation" allows for the ultra-micro hardness measurement of materials such as metals, polymers, plastics, and ceramics. Additionally, since hardness can be quantified, it is also useful for long-term quality control. The hardness is determined by directly reading the depth of the indentation while applying a load to the indenter. It is also possible to determine characteristic values related to recovery behavior. 【Device Overview】 ■ Test force range: 0.4mN to 1000mN, Accuracy: ±0.02mN ■ Indentation range: 1nm (0.01μm) to 700μm *For more details, please refer to the PDF document or feel free to contact us.

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We will introduce an example of analysis using EBSD for ceramic (Al2O3). In the "Observation/Elemental Analysis," it was determined to be Al2O3 based on elemental analysis using EDX, and it was observed that Si was scattered as shown in the map. In the "Analysis using EBSD," the distribution of crystal size and orientation can be confirmed using the EBSD method, and by highlighting on the map, the features that appeared in the graph can be visualized. [Analysis Overview] ■ Observation/Elemental Analysis - Observation using SEM and elemental analysis using EDX ■ Analysis using EBSD - Observation of crystal structure using EBSD *For more details, please refer to the PDF document or feel free to contact us.

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We would like to introduce a case where discoloration on the surface of a copper-clad laminate was analyzed using Raman spectroscopy. Our Raman spectroscopic analysis can analyze not only organic substances but also inorganic compounds such as metal oxides. Please feel free to contact us when needed. [Analysis Details] ■ Analysis of black spots on the surface of the copper-clad laminate - Slight discoloration is observed on the surface - Upon magnification, a condition resembling black stains is seen - A spectrum of CuO was obtained from the discolored area - The nature of the discoloration is believed to be copper oxide formed on the surface of the copper *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

The corrosion process of iron involves various compounds depending on the degree of corrosion, and even the same iron oxides and hydroxides exhibit different spectra due to differences in valence and crystal structure. Raman analysis allows for the confirmation of the oxidation state of iron in a micron-scale range. [Analysis Content] ■ Analysis of rust formed on the iron surface - Mixture of FeOOH and Fe2O3 - Mixture of FeOOH, Fe3O4, and Fe2O3 ■ Raman spectra of iron rust components *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

This document presents a case study that elucidates the causes of discoloration in super engineering plastic polyamide-imide (PAI) films used in coatings, composite film materials, and various molded products through instrumental analysis and reaction mechanisms. It includes analysis results from infrared (IR) devices, data analysis, and reaction mechanisms, starting with the material polyamide-imide. While the storage stability of raw materials is essential in product manufacturing, environmental conditions during the processing can sometimes induce defects. We encourage you to read on. [Contents] ■ About the material polyamide-imide ■ Analysis results from IR devices ■ Data analysis and reaction mechanisms *For more details, please refer to the PDF document or feel free to contact us.

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We provide a defect diagnosis menu for LCD panels, from confirming defects to identifying causes and conducting detailed defect analysis. In the initial analysis, we perform a status check (lighting test), panel disassembly, and optical microscope observation, tailored to the defect symptoms. In the detailed analysis, we propose suitable methods such as surface analysis, cross-sectional analysis, and component analysis based on the diagnosis results from the initial analysis. It is also possible to speculate on the defect occurrence mechanism, including narrowing down the production processes that caused the defects. 【Analysis Content】 ■ Initial Analysis - Conducted based on the status check (lighting test), panel disassembly, and optical microscope observation, tailored to the defect symptoms. - Narrowing down from broad areas such as cell panels and surrounding circuits to finer details. ■ Detailed Analysis (additional analysis fees apply) - Proposing suitable methods such as surface analysis, cross-sectional analysis, and component analysis based on the diagnosis results from the initial analysis. - Speculating on the defect occurrence mechanism, including narrowing down the production processes that caused the defects. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

We will introduce the EBSD analysis of flexible printed circuits (FPC). Regarding flexible circuits used in products with movable parts or bending mechanisms, we conducted a verification using EBSD to check for differences in the Cu wiring between the bending section and the fixed section. As a result, while no significant abnormalities or differences were observed in the optical images of the wiring in the bending and fixed sections, the EBSD analysis revealed areas where strain is accumulated in the wiring of the bending section and locations where low-angle grain boundaries are concentrated. [Analysis Content] ■ Appearance of the flexible circuit and optical images of Cu wiring - Appearance of the flexible circuit - Wiring in the bending section - Wiring in the fixed section ■ Comparison of Cu wiring in the bending and fixed sections using EBSD - Wiring in the bending section - Wiring in the fixed section *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu Office in 1993, we have cultivated our own unique analysis and analytical techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 - OBIRCH analysis supports not only Si but also SiC and GaN devices. - FIB processing is possible from either side. - Visualization of the depletion layer formed at the PN junction. - Elemental analysis such as EDS and EELS is also supported. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

When stress such as warping, bending, or twisting is applied to the printed circuit board, cracks may occur inside the MLCC (Multi-Layer Ceramic Chip Capacitor). Moreover, cracks that develop internally are often hidden beneath the electrodes, making it difficult to detect them through visual inspection. In such cases, how about checking with X-rays? [Observation Details] ■ Oblique CT Observation It is possible to perform CT without destroying the printed circuit board, in its original state. ■ Orthogonal CT Observation It is possible to observe the shape of the components in their original state. *For more details, please refer to the PDF document or feel free to contact us.

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While lead-free solder is becoming widespread, whiskers formed from Sn plating or solder joints have a significant impact on the reliability of electronic components. Our company offers a consistent whisker evaluation from reliability testing to analysis. Inspectors carefully observe which components and pins on the board have whiskers. 【Features】 ■ Conduct visual inspections of assembled boards after reliability testing to determine the presence of whiskers. ■ If whiskers are detected during visual inspection, observe and measure them using a digital microscope. ■ For more detailed observation and analysis, surface SEM/EDX analysis can be performed. ■ If necessary, cross-sectional observation (SEM) and crystal orientation analysis (EBSD) can also be conducted. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

Our company provides analysis and reliability evaluation services. In the "Narrowing Down Defective Areas Using the EBAC (Absorbed Current) Method," we identify open defects and high-resistance areas in wiring using the EBAC method with a nano-probe and high-sensitivity amplifier. By sensing the absorbed current as voltage, we can obtain a contrast based on the resistance voltage drop within the wiring, allowing us to detect high-resistance defects in TEGs such as via chains. [Analysis Examples Using the EBAC Method] ■ SEM Images ■ Overlaid Images ■ Absorbed Current Images (Current Sensing) ■ Absorbed Current Images (Voltage Sensing) *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

Our company provides analysis and reliability evaluation services. EELS analysis and EDS analysis are analytical methods that identify elements by irradiating accelerated electrons onto TEM samples. In the case of "different carbon films," we conducted film quality evaluation in the nano region using the EELS analysis method, which is characterized by state analysis. In the EDS analysis, we detected trace amounts of N and O only in the Bottom film through spectral comparison. In the EELS analysis, the difference in shoulder shapes of the two spectra allows for a comparison of the bonding states of N, O, and C present in the organic film. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

Our company conducts "Observation of diffusion layers in semiconductors using FIB-SEM." By creating cross-sections using the FIB method and observing them with SEM, we visualized the diffusion layers of semiconductors and evaluated their shapes. In a case where the differences in built-in potential were visualized using the Inlens detector of the SEM, a difference in the energy of secondary electrons generated in N-type and P-type regions occurred due to the built-in potential. This difference in trajectories is detected by the SEM detector. 【Features】 ■ Both shape observation and diffusion layer observation can be performed using FIB-SEM. ■ Shorter delivery times compared to other methods. ■ Concentrations can be detected up to 10E16. ■ While the PN interface can be visualized, the concentration differences of N+/N- and P+/P- cannot be detected. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

At AITES, we conduct quality analysis of LCD components/products, confirming the quality status of products based on our expertise in LCD technology. The target panels include SEG-LCD, AM-LCD (a-Si TFT / LTPS TFT), OLED for automotive, monitors, mobile devices, and more. We perform quality analysis using our analytical methods on the various structures of liquid crystal panels. 【Analysis Details (Excerpt)】 <Reliability/Lighting Tests> ■ Classification - Reliability Testing - Lighting Inspection ■ Analytical Methods - Oven Drive Testing - Visual Inspection *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

Our company conducts observations of the diffusion layer of SiC MOSFETs using LV-SEM and EBIC methods. We can perform cross-section fabrication of specific areas using FIB, shape observation of the diffusion layer using LV-SEM/EBIC, and further through-analysis of wiring structures and crystal structures using TEM, all applicable to SiC power devices. In "LV-SEM diffusion layer observation," secondary electrons (SE2) affected by the built-in potential of the PN junction are detected using the Inlens detector. The shape of the diffusion layer can be visualized through SEM observation of the FIB cross-section. 【Analysis methods using EBIC】 ■ PEM/OBIRCH defect location identification ■ FIB cross-section processing ■ Low acceleration SEM ■ EBIC analysis ■ TEM *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

We conduct failure analysis of orange LEDs that have been damaged by electrostatic discharge (ESD). LEDs that have been destroyed during ESD testing and show a decrease in luminous intensity can be analyzed using emission photometry and the IR-OBIRCH method, allowing us to clarify the failure phenomena. We have examples such as "Comparison of brightness and characteristics between good products and ESD-damaged products" and "Emission analysis using an emission microscope." [Analysis Examples] ■ Comparison of brightness and characteristics between good products and ESD-damaged products - By polishing the lens part of a bullet-type LED to flatten it, a brightness comparison was conducted, revealing dark areas. ■ Emission analysis using an emission microscope - In the ESD-damaged products, dark areas were observed under forward bias, while only the damaged areas emitted light under reverse bias. ■ IR-OBIRCH and SEI analysis - Detailed damage locations were identified through IR-OBIRCH analysis of ESD-damaged products. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment

Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with lower energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of a pseudo-leak. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.

• Other analytical equipment

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for different failure modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, starting with "Luminescence Analysis/OBIRCH Analysis," which allows for layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Luminescence Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Micro Probe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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We conduct "cross-sectional observation of surface-mounted electronic components." Through cross-sectional observation after mechanical polishing, it is possible to closely examine the solder joint condition (presence of cracks or voids) of electronic components on the mounted substrate, as well as the internal structure of the components. For "SOP components," detailed observation can be made from the overall cross-section to the solder connection, and for "aluminum electrolytic capacitors," it is possible to observe the internal structure of the electrolytic capacitor components and their connection to the substrate. 【Features】 ■ SOP (Small Outline Package) components - Detailed observation can be made from the overall cross-section of SOP components to the solder connection. ■ Chip ceramic capacitors - Detailed observation can be made from cracks in the component material to cracks in the solder area. ■ Aluminum electrolytic capacitors - Observation can be made from the internal structure of the electrolytic capacitor components to their connection to the substrate. *For more details, please refer to the PDF document or feel free to contact us.

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Our company specializes in "cross-section polishing of implementation parts and electronic components." To quickly provide cross-section samples suitable for observing various parts, we carefully polish each component by hand, using an efficient process without waste. Please feel free to contact us for more information. 【Features】 ■ Quickly provide cross-section samples suitable for observing various parts ■ Carefully polish each component by hand, using an efficient process without waste *For more details, please refer to the PDF materials or feel free to contact us.

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We offer contract analysis using the shape measurement laser microscope "VK-X200." Various measurements can be performed, including flatness measurement, width measurement, height measurement, and film thickness measurement. Depending on the size of the subject and the required precision, we select the appropriate objective lens for observation and measurement. The range varies depending on the lens, but due to its coupling function, it is also possible to observe and measure over a wide area. 【Features】 - Various measurements can be performed, including flatness measurement, width measurement, height measurement, and film thickness measurement. - The appropriate objective lens is selected based on the size of the subject and the required precision. - The coupling function allows for observation and measurement over a wide area. *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment
• Analysis and prediction system

We offer contract analysis using the shape measurement laser microscope "VK-X200." Observations and measurements are conducted using a 408nm laser. The measurement results are based on a traceability system that connects to national standards, allowing the measurement equipment to be used for non-destructive testing. With the laser microscope, 3D measurements of the surface roughness of samples can be performed, as well as measurements of the thickness of transparent materials and surface shapes through transparent materials. 【Features】 ■ Capable of 3D measurement of the surface roughness of samples ■ Capable of measuring the thickness of transparent materials and surface shapes through transparent materials ■ Observations and measurements conducted using a 408nm laser ■ Measurement results are based on a traceability system that connects to national standards ■ Can be utilized as non-destructive measurement equipment *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment
• Analysis and prediction system

The CP method allows for the observation of cross-sections without damage from polishing, compared to mechanical polishing methods. Our triple ion milling device with cooling function achieves high processing precision and a wide processing area through ion beams irradiated from three directions. For materials sensitive to heat, processing can be done while reducing damage with the cooling function. 【Features】 - Processing width of approximately 4mm and processing depth of approximately 1mm, allowing for extensive processing. - High flatness in both hard and soft materials, enabling the production of cross-sections without physical damage. - Capable of producing cross-sections with good positional accuracy. - Processing can be done while cooling (cryogenic). *For more details, please refer to the PDF document or feel free to contact us.

• Other analytical equipment
• Analysis and prediction system

The EBSD (Electron Backscatter Diffraction) method obtains orientation information of individual crystals from the backscattered electron diffraction patterns generated by electron beam irradiation and maps it. Furthermore, it is a technique for investigating not only crystal orientation (texture) but also material microstructural states such as grain distribution and stress-strain as quantitative and statistical data. For example, when the sample is tilted significantly in an SEM and the electron beam is irradiated, if the sample is crystalline, electron beam diffraction occurs within the sample. By indexing that pattern, it becomes possible to determine the crystal orientation at that point. By observing the differences in crystal orientation, it is possible to infer the residual stress within the crystal grains. **Features** - Obtains and maps orientation information of individual crystals - Investigates material microstructural states such as crystal orientation, grain distribution, and stress-strain - Allows inference of residual stress within crystal grains by observing differences in crystal orientation *For more details, please refer to the PDF document or feel free to contact us.*

• Electrical Equipment Testing
• Other analytical equipment

The EBSD (Electron Backscatter Diffraction) method obtains orientation information of individual crystals from the electron diffraction patterns generated by electron beam irradiation and maps this information. Furthermore, it is a technique for investigating not only crystal orientation (texture) but also material microstructural states such as crystal grain distribution and stress-strain as quantitative and statistical data. In the observation of changes before and after compression of a Cu plate, IQ maps, GROD maps, and IPF maps (in the Axis 3 direction) can be used to compare the half-life of crystal grain size before and after compression. 【Features】 ■ Obtains and maps orientation information of individual crystals ■ Investigates material microstructural states such as crystal orientation, crystal grain distribution, and stress-strain *For more details, please refer to the PDF materials or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

The EBSD method is a technique for analyzing the distribution of crystal grains, microstructure, and crystal phase distribution by calculating the crystal orientation of patterns continuously captured based on the information of the crystal structure of the sample. Materials such as metals and ceramics, which are crystalline, are thought to be composed of numerous crystal lattices like cubes, and this analysis method examines the orientation of these lattices (crystal orientation). Various maps are used, including the IQ map (Image Quality Map), IPF map, GROD map, and pole figures. 【Features】 ■ The EBSD method is a technique for analyzing the distribution of crystal grains, microstructure, and crystal phase distribution. ■ Uses the TSL Solutions OIM7.0 crystal orientation analysis device. ■ Analyzes the orientation of the crystal lattice (crystal orientation). ■ Changes in crystal orientation and grain size due to different processing conditions (such as rolling and extrusion) can be analyzed. *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

SEM images, phase maps, and IQ maps of Cu6Sn5 highlighted for each crystal grain, as well as IQ maps of Cu6Sn5 highlighting the grain boundary rotation angles, were used to analyze the crystals using the EBSD method. Compounds such as Cu6Sn5 and Ag4Sn are growing at the Cu pad/solder interface, and the distribution of crystal sizes and crystal inclination angles can be shown through histograms. Additionally, by highlighting on the map, the features that appear in the graph can be visualized. [Overview] ■ Crystal analysis using the EBSD method - SEM images - Phase maps - IQ maps of Cu6Sn5 (highlighted for each crystal grain) - IQ maps of Cu6Sn5 (highlighting the grain boundary rotation angles) *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

Here is an example of BGA (Ball Grid Array) analysis. For observation using a microscope, both optical microscopy and SEM are employed. In crystal analysis using the EBSD method, we utilize Phase maps, Sn Grain maps, Sn IPF maps, and Sn GROD maps, which allow for the inference of crystal states and residual stresses. [Overview] ■ Crystal analysis using the EBSD method - Phase map - Sn Grain map - Sn IPF map - Sn GROD map *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

We will introduce an example of analysis using EBSD for steel (Fe). Using histograms of gradients and corresponding crystal grain distribution maps, IPF maps, and crystal grain distributions, we observe the crystal structure with EBSD. The EBSD method allows us to confirm the distribution of crystal sizes and the orientation of crystal directions, and by highlighting on the map, we can visualize the features that appear in the graphs. [Overview] ■ Observation of crystal structure using EBSD - IPF map - Crystal grain distribution map - Crystal grain distribution *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

We will introduce an example of analysis using EBSD for high melting point solder (Pb-based solder containing a small amount of Sn). The EBSD method allows for the estimation of grain distribution and residual stress. Additionally, there are methods that can simultaneously analyze metals with different crystal structures, enabling data acquisition for each metal. 【Features】 ■ Ability to estimate grain distribution and residual stress ■ Methods available for simultaneous analysis of metals with different crystal structures, allowing for data acquisition for each metal *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

We will introduce an example of analysis using EBSD for vias (Cu) formed in laminated substrates. The EBSD method allows for the estimation of crystal size distribution and residual stress. Additionally, by highlighting on the map, the features that appear in the graph can be visualized. [Overview] ■Observation of crystal structure using EBSD ・IPF map ・GROD map ・Crystal grain distribution map *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment

Aites Co., Ltd. conducts analysis of pipes using EBSD. With the EBSD method, it is possible to confirm the distribution of crystal sizes and the orientation. Additionally, by highlighting on the map, the features that appear in the graph can be visualized. 【Overview】 ■ Confirmation of crystal size distribution and orientation ■ Visualization of features that appear in the graph *For more details, please refer to the PDF document or feel free to contact us.

• Electrical Equipment Testing
• Other analytical equipment