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  6. MiniLab-SA125A Multi-Target Magnetron Sputtering System

MiniLab-SA125A Multi-Target Magnetron Sputtering System

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last updated:Oct 12, 2024

テルモセラ・ジャパン
テルモセラ・ジャパン
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High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)

Continuous multilayer film, simultaneous film formation (2-6 elements simultaneous film formation: RF, DC can be freely switched from HMI) High-power RF, DC power supplies, and pulse DC power supplies can be flexibly configured for multi-cathode using our unique 'Plasma Switching Relay' module, allowing for versatile applications. High-temperature substrate heating stage (double jacket water-cooled) options: -1) Max 600℃ (lamp heating) -2) Max 1000℃ (C/C composite) -3) Max 1000℃ (SiC coating) Reverse sputtering stage inside the load lock: -1) 300W, or -2) Soft-Etching (<30W) System main control: 'IntelliDep' control system Windows PC (or TP HMI) interface All operations are centrally managed from a single HMI screen.

    Air conditioning equipmentDuct related equipment
ML-S125-iPROS_550-1.jpg

MiniLab-SA125A Multi-Target Magnetron Sputtering System

ML-S125-iPROS_550-1.jpg
ML-S125-iPROS_550-1.jpg
  • Related Link - https://thermocera.com/products/thinfilmdepo/minil…

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【Main Specifications】 - Substrate size: Supports Max 12 inch - Chamber: SUS304 UHV compatible, 500 x 500 x 500 mm - Achievable vacuum level: 5 x 10^-5 pascal - Sputter cathodes: Φ2" (maximum 6), Φ3" (maximum 4) - Plasma power supply: RF 150W, 300W, DC 850W, HiPIMS 5KW - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Turbo molecular pump + dry scroll pump - Main chamber RIE etching stage RF 300W - LL chamber <30W low power control *Soft etching *Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC control: All operations can be performed via touch panel/PC without dispersing operations. - Equipment installation dimensions: 1,767(W) x 754(D) x 1,645(H) mm ● Mixed specifications such as resistance heating deposition, organic material deposition, and EB deposition are also possible. ● Multi-chamber types can also be manufactured.

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Applications/Examples of results

Manufacturing factories for electronic devices, fuel cells, displays, universities and research institutions, pharmaceutical and chemical factories, food factories, and many others.

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Thin Film Experimental Device - "PRODUCTS GUIDE 2022"

★★Thermosera Japan_Thin Film Experiment Equipment_"PRODUCTS GUIDE 2022"★★

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Introducing various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments. We present a range of thin film experimental devices and components for the research and development field. 【nano Benchtop Series】 Desktop type, high performance! The nano Benchtop series thin film experimental devices Compact size housing high-functionality and high-spec thin film equipment. 【MiniLab Flexible Thin Film Experimental Device】 A "flexible experimental device" that combines various device configurations and necessary components according to specified requirements. ● Featured Devices - nanoPVD-S10A desktop magnetron sputtering device - nanoPVD-T15A desktop organic film and metal film deposition device - nanoCVD graphene synthesis device - ANNEAL desktop wafer annealing device - MiniLab series flexible thin film experimental device - MiniLab-GB glove box type thin film experimental device - Other components

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MiniLab-026

★☆★☆ MiniLab Series Flexible Thin Film Experimental Device ★☆★☆

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The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules according to the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug&Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating deposition (TE), organic deposition (LTE), electron beam deposition (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space-Saving】 - Single rack type (026): 590(W) x 590(D) mm - Dual rack type (060): 1200(W) x 590(D) mm - Triple rack type (125): 1770(W) x 755(D) mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.

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Product image of ANNEAL wafer annealing equipment.

Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

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Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10^-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ through a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety with interlocks. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (only in vacuum or inert gas) - SiC coating heater: Max 1000℃ (in vacuum, inert gas, O2)

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TCF-C500 Ultra High Temperature Small Experimental Furnace Image

☆★☆ [TCF-C500 Ultra High Temperature Small Experimental Furnace] Max 2900℃ ☆★☆

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Compact, space-saving, and energy-efficient! High-performance ultra-high-temperature experimental furnace for R&D. A small-scale experimental furnace capable of heating small samples up to 2900°C for R&D purposes. It can be used for various sintering experiments, including ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power supply specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others

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テルモセラ・ジャパン

テルモセラ・ジャパン

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film equipment for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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