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  6. Multivariate Multi-Sputtering Device [MiniLab-S125A]

Multivariate Multi-Sputtering Device [MiniLab-S125A]

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last updated:Oct 12, 2024

テルモセラ・ジャパン
テルモセラ・ジャパン
  • Official site

High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)

Continuous multilayer film, simultaneous film formation (2-6 element simultaneous film formation: RF, DC can be freely switched from HMI) High-power RF, DC power supplies, and pulse DC power supplies can be flexibly configured in multi-cathode arrangements using our unique 'Plasma Switching Relay' module, allowing for versatile applications. High-temperature substrate heating stage (double jacket water-cooled) options: -1) Max 600℃ (lamp heating) -2) Max 1000℃ (C/C composite) -3) Max 1000℃ (SIC coating) Reverse sputtering stage in load lock: -1) 300W, or -2) Soft-Etching (<30W) System main control: 'IntelliDep' control system Windows PC (or TP HMI) interface All operations are centrally managed from a single HMI screen.

    Air conditioning equipmentDuct related equipment
ML-S125-iPROS_550-1.jpg

Multivariate Multi-Sputtering Device [MiniLab-S125A]

ML-S125-iPROS_550-1.jpg
ML-S125-iPROS_550-1.jpg
  • Related Link - https://thermocera.com/products/thinfilmdepo/minil…

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basic information

【Main Specifications】 - Board size: Supports up to 12 inches - Chamber: SUS304 UHV compatible, 500 x 500 x 500 mm - Achievable vacuum level: 5 x 10^-5 pascal - Sputter cathodes: Φ2" (maximum 6), Φ3" (maximum 4) - Plasma power supply: RF 150W, 300W, DC 850W, HiPIMS 5KW - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Turbo molecular pump + dry scroll pump - Main chamber RIE etching stage RF 300W - LL chamber <30W low power control *soft etching *Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC control: All operations can be performed via touch panel/PC without dispersing operations. - Equipment installation dimensions: 1,767(W) x 754(D) x 1,645(H) mm ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, etc., are also possible. ● Multi-chamber systems can also be manufactured.

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Applications/Examples of results

Manufacturing factories for electronic devices, fuel cells, displays, universities and research institutions, pharmaceutical and chemical factories, food factories, and many others.

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Soft etching device [nanoETCH] < Damage-free etching with 30W low power control

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Product image of ANNEAL wafer annealing equipment.

Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

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Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10^-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ through a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety with interlocks. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (only in vacuum or inert gas) - SiC coating heater: Max 1000℃ (in vacuum, inert gas, O2)

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Product image of Mini-BENCH-prism

◉Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃

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◉ Maximum operating temperature: 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature: 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Maximum 3 systems of MFC automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors for abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments of small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in a variety of fields.

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Product image of Mini-BENCH small experimental furnace (Φ2 inch specification)

□■□■【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃ □■□■

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Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sample sintering in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Planar Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

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MAG series magnetron sputtering cathode

★【Magnetron Sputtering Cathode】★ Thermocera Japan

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High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals and insulators without impurities. It also excels in maintenance. 【Features】 - Compatible with high vacuum - Sizes: Φ2inch, Φ3inch, Φ4inch - Adopts a clamp ring type, no bonding required - Excellent maintenance, allowing for easy target replacement - Abundant options such as shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes 【Main Specifications】 - Compatible with RF, DC, and pulse DC - Target thickness: 1/16" to 1/4" - N-type coaxial connector - Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection - Case material: SUS304 - Target clamp material: Al or SUS304 - Bellows (*Flexi-head type) material: SUS316 - Insulation material: PEEK/PTFE - Seal material: Viton - High-strength magnet pack: NiFe

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テルモセラ・ジャパン

テルモセラ・ジャパン

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film equipment for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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