Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10^-7 mbar)
[ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere.
It allows high-temperature processing up to 1000℃ through a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety with interlocks. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples.
The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature:
- Halogen lamp heater: Max 500℃
- C/C composite heater: Max 1000℃ (only in vacuum or inert gas)
- SiC coating heater: Max 1000℃ (in vacuum, inert gas, O2)


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Developed and manufactured by Moorfield Nanotechnology Ltd (UK)
http://moorfield.co.uk/anneal/
ANNEAL Equipment Introduction Video Site