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  6. Announcement of the Introduction of FIB-SEM Helios 5 UC

Announcement of the Introduction of FIB-SEM Helios 5 UC

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last updated:Sep 28, 2022

アイテス
アイテス
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Cross-section production of soft materials has also been realized! 3D reconstruction is possible with Auto Slice & View!

The introduction of the "FIB-SEM Helios 5 UC" is scheduled to start service in November! We will provide shorter delivery times and reliable feedback than ever before. We will achieve high-throughput cross-sectional observation and analysis of a wide range of materials, from semiconductor devices such as power devices, ICs, solar cells, and light-emitting elements, to electronic components like MLCCs and soft materials. With a high-quality beam of up to 100nA, we can process large areas at high speed, and by finishing the FIB at low acceleration, we can produce high-quality samples with minimal damage layers. 【Main Features of Helios 5 UC】 ■ High-speed, large-area FIB processing ■ Damage layer reduction through low acceleration finishing ■ Cryo-FIB processing ■ 3D imaging ■ Fully automated TEM sample preparation *For more details, please refer to the PDF document or feel free to contact us.

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FIB-SEM

Announcement of the Introduction of FIB-SEM Helios 5 UC

FIB-SEM Helios 5 UC.png
FIB-SEM Helios 5 UC.png
  • Related Link - https://www.ites.co.jp/analyze/apparatus/fe-sem

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【Overview of FIB-SEM Composite Device】 ■ SEM column mounted in the vertical direction and FIB column at an angle ■ Real-time observation of FIB processing using SEM ■ Improved processing position accuracy ■ Observation and analysis possible without exposure to the atmosphere * For more details, please refer to the PDF document or feel free to contact us.

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catalog(11)

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Failure analysis of power devices

Failure analysis of power devices

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

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Cross-beam FIB cross-sectional observation

Cross-beam FIB cross-sectional observation

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Observation of diffusion layers in semiconductors using FIB-SEM.

Observation of diffusion layers in semiconductors using FIB-SEM.

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Power semiconductor analysis services

Power semiconductor analysis services

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[Data] Analysis of SEG-LCD Panel Display Malfunctions

[Data] Analysis of SEG-LCD Panel Display Malfunctions

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LCD Panel Analysis Data Collection

LCD Panel Analysis Data Collection

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Announcement of the introduction of FIB-SEM Helios 5 UC

Announcement of the introduction of FIB-SEM Helios 5 UC

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Power device failure location / Slice & View three-dimensional reconstruction

Power device failure location / Slice & View three-dimensional reconstruction

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Announcement of the introduction of Talos F200E

Announcement of the introduction of Talos F200E

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Specification verification and failure analysis through reliability testing.

Specification verification and failure analysis through reliability testing.

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News about this product(3)

Announcement of the introduction of Talos F200E

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Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution for TEM and STEM has been improved, and performance has been significantly enhanced, allowing for EDS analysis with four detectors. Additionally, it is equipped with features such as drift-corrected frame integration (DCFI), which integrates multiple frames while correcting for drift.

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Power device failure location / Slice & View three-dimensional reconstruction

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I will introduce the three-dimensional reconstruction of failure locations using the Slice & View function of FIB-SEM. Continuous SEM images of the structure are acquired, and the obtained images are corrected for positional misalignment between SEM images and visualized in three dimensions using 3D construction software (Avizo). By combining the position identification technique for cross-sectioning the failure location with the Slice & View function, it is possible to obtain continuous SEM images that retain the defective state and include information before and after the abnormal area.

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Announcement of the Introduction of FIB-SEM Helios 5 UC

  • Product news

The introduction of the "FIB-SEM Helios 5 UC" is scheduled to start service in November. We will provide shorter delivery times and reliable feedback than ever before. We will achieve high-throughput cross-sectional observation and analysis of a wide range of materials, from semiconductor devices such as power devices, ICs, solar cells, and light-emitting elements, to electronic components like MLCCs and soft materials. With a high-quality beam of up to 100nA, we can process large areas at high speed, and by finishing the FIB at low acceleration, it is possible to produce high-quality samples with minimal damage layers. You can view related products and catalogs.

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アイテス

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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.

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