4-Yen Multi-Sputtering Device [MiniLab-S060]

4 cathodes with Φ2 inch mounted
Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (Pulse DC 5KW) x 1
Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch
MFC x 3 systems (Ar, O2, N2) for reactive sputtering
RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber)
Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating)
Substrate rotation and vertical movement (automatically controlled by stepping motor)
APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side)
Dimensions: 1,120(W) x 800(D)
● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.


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Due to its modular design, it is possible to assemble a dedicated machine tailored to your desired film type and process. A flexible and compact experimental device that can accommodate various applications.