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The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specifications above 800°C are designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫︎ Crucible material: PBN, Graphite, Quartz ⚫︎ Heater: NiCr wire, Kanthal wire (*for O2) ⚫︎ Crucible volume: 10cc (maximum filling amount 15cc) ⚫︎ Shutter: Pneumatic or motor-driven ⚫︎ Water-cooled jacket ⚫︎ Controller (for heater and shutter control)

Introducing various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments. We present a range of thin film experimental devices and components for the research and development field. 【nano Benchtop Series】 Desktop type, high performance! The nano Benchtop series thin film experimental devices Compact size housing high-functionality and high-spec thin film equipment. 【MiniLab Flexible Thin Film Experimental Device】 A "flexible experimental device" that combines various device configurations and necessary components according to specified requirements. ● Featured Devices - nanoPVD-S10A desktop magnetron sputtering device - nanoPVD-T15A desktop organic film and metal film deposition device - nanoCVD graphene synthesis device - ANNEAL desktop wafer annealing device - MiniLab series flexible thin film experimental device - MiniLab-GB glove box type thin film experimental device - Other components

The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules according to the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug&Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating deposition (TE), organic deposition (LTE), electron beam deposition (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space-Saving】 - Single rack type (026): 590(W) x 590(D) mm - Dual rack type (060): 1200(W) x 590(D) mm - Triple rack type (125): 1770(W) x 755(D) mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10^-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ through a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety with interlocks. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (only in vacuum or inert gas) - SiC coating heater: Max 1000℃ (in vacuum, inert gas, O2)

High-temperature substrate heating mechanism for vacuum thin film processes, used for the development of semiconductors, electronic devices, etc. It can be utilized for various film deposition experiments on silicon substrates, sapphire substrates, compound substrates, and others. Selection of elements and materials according to ultra-high temperature substrate heating conditions up to 1800°C for vacuum equipment such as CVD and sputtering is possible. ◉ Compatible with ultra-high vacuum, inert gas, O2, and various process gas atmospheres. ◉ Substrate up/down/rotation mechanism and RF/DC bias application possible. ◉ Selection of elements according to the atmosphere: NiCr, Inconel, Tungsten, Graphite, CC composite, Graphite (SiC coating, PBN coating) CC composite (PG coating) ◉ Various vacuum flange connections: ICF, VF ◉ Thermocouple included ◉ Other options: Motor controller, temperature control unit, transbox.

Compact, space-saving, and energy-efficient! High-performance ultra-high-temperature experimental furnace for R&D. A small-scale experimental furnace capable of heating small samples up to 2900°C for R&D purposes. It can be used for various sintering experiments, including ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power supply specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others

◉ Maximum operating temperature: 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature: 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Maximum 3 systems of MFC automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors for abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments of small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in a variety of fields.

Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sample sintering in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Planar Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals and insulators without impurities. It also excels in maintenance. 【Features】 - Compatible with high vacuum - Sizes: Φ2inch, Φ3inch, Φ4inch - Adopts a clamp ring type, no bonding required - Excellent maintenance, allowing for easy target replacement - Abundant options such as shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes 【Main Specifications】 - Compatible with RF, DC, and pulse DC - Target thickness: 1/16" to 1/4" - N-type coaxial connector - Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection - Case material: SUS304 - Target clamp material: Al or SUS304 - Bellows (*Flexi-head type) material: SUS316 - Insulation material: PEEK/PTFE - Seal material: Viton - High-strength magnet pack: NiFe

This is a research and development RF/DC magnetron sputtering device. Despite its high performance and multifunctionality, it fits into limited laboratory space with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: Up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, and more 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ High-precision APC process control with MFC ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down movement, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. It employs a low-temperature organic deposition source with excellent temperature responsiveness/stability and a high-temperature deposition source for metal films. A vacuum deposition system for R&D with fully automatic PLC control and excellent operability and maintainability, operated via a simple touch panel. An intuitive HMI that requires no complicated operating procedures, allowing anyone to operate it easily. Connects to a PC via USB cable for log saving and creating and storing automatic film deposition recipes. ◉ Compact size: 804(W) x 530(D) x 600(H)mm ◉ Weight: 40kg to 70kg (depending on equipment configuration) ◉ Excellent basic performance - Achievable vacuum level: 5x10-5 Pascal - Equipped with a high-performance turbo molecular pump - Φ2 inch or Φ4 inch substrates ◉ Deposition sources - Resistance heating deposition source TE x up to 2 units - Organic deposition source LTE x up to 4 units (if mixed with resistance heating TE, up to 2 units) ◉ 7" touch panel ◉ Continuous film deposition - Automatic control of deposition programs - 30 types of registered recipes - High-precision wide-range vacuum gauge ◉ Abundant options - Substrate rotation - Up and down movement with a 300mm stroke - Substrate shutter - Dry pump (RP standard)

Compact and space-saving! Ideal for organic thin film development, all processes such as deposition, sputtering, and annealing can be seamlessly performed within a glove box. In the development processes of organic EL, organic thin film solar cells, and graphene/2D materials (two-dimensional layered inorganic nanomaterials such as transition metal dichalcogenides), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. By housing a PCD/CVD chamber within the glove box, a "oxygen and moisture-free" experimental environment for organic film applications is achieved in a compact and space-saving manner. 【Features】 ◉ A series of processes such as PVD film formation, spin coating, and hot plate baking can be performed seamlessly within the glove box without exposing them to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing

Compact measurement, robust body, high precision ±1%, 240msec fast response. It can be applied for industrial machine control, temperature monitoring in production sites, and various other purposes. 【Features】 ◎ Integrated amplifier and sensor ◎ 4-20mA output (standard), 0-50mV, thermocouple K, J, T output (optional) ◎ Accuracy: ±1% or ±1℃ (whichever is larger) ◎ Repeatability: ±0.5% or ±0.5℃ (whichever is larger) ◎ Response speed: 240msec ◎ Protection rating: IP65 【Other Specifications】 ◉ Field of view: 2:1 or 15:1 ◉ Temperature range: ・LT (-20℃ to 100℃) ・MT (0 to 250℃) ・HT (0 to 500℃) ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.95 (fixed) ◉ Power supply: 24VDC ◉ Body dimensions: Φ18mm (diameter) x 103mm (length) ◉ Weight: approximately 95g ◉ Cable 1m (standard included): maximum extension 3m (optional)

【Overview】 Connect to a Windows PC using the standard accessory "CalexConfig" and the included USB cable (1.8m), allowing for the setting of measurement parameters and analysis of measurement results with CSV output on the PC. 1) 4-20mA output 2) USB output (operates on USB bus power) 3) Simultaneous use of 4-20mA/USB output These three usage methods are possible. 【Features】 ◎ Simultaneous use of USB data logging and 4-20mA analog output ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 200msec fast response ◉ PUA2: Covers short wavelengths from 2.0 to 2.4μm, capable of measuring metal surfaces ◉ PUA5: Ideal for measuring glass surfaces, wavelength 5μm ◉ PUA8: General purpose, suitable for a wide range of applications, wavelength 8-14μm 【Other Specifications】 ◉ Field of view: 15:1, 25:1, 30:1, or 75:1 ◉ Emissivity setting range: 0.1 to 1.0 ◉ Power supply: 24VDC ◉ Body dimensions: Φ27.6mm (diameter) x 61mm (length) ◉ Weight: approximately 155g ◉ Analog signal cable 1m (standard included, extendable up to 30m) *USB cable 1.8m (USB cable cannot be extended)

ExTemp is a radiation temperature sensor with an intrinsically safe explosion-proof structure that can be used in hazardous material handling equipment and factories such as petrochemical plants, pharmaceutical factories, and chemical plants. (TIIS Type Certification Number: 21097) TIIS (Technical Institution of Industrial Safety) certified for use in hazardous locations (Zone 0, 1, & 2) ● Usable in hazardous locations Zone 0, 1, and 2 (special hazardous locations, Class I hazardous locations, and Class II hazardous locations) ● Measurement temperature range: -20℃ to +1000℃ ● Maximum and minimum adjustable span: Max 1000℃, Min 100℃ (configurable within the -20 to 1000℃ range) ● 2-wire, 4-20mA output ● Includes intrinsically safe explosion-proof isolation barrier ● Comes with USB-connected configuration setter "LCT Setter": Allows scaling, span adjustment, emissivity settings, etc., using the included dedicated software on a Windows PC ● Options: Mounting brackets, air purge kit, extension cables (10m, 25m) ● Designed for harsh environments, featuring a 316 stainless steel housing ● Protection rating IP65

**Overview** Connect to a Windows PC using the standard accessory "CalexConfig" and a USB cable (1.8m included) to set measurement parameters for the sensor, analyze measurement results, and output them in CSV format. There are three ways to use it: 1) 4-20mA output 2) USB output (operates on USB bus power) 3) Simultaneous use of 4-20mA/USB output **Features** ◎ Simultaneous use of USB data logging and 4-20mA analog output ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 200msec fast response ◉ PUA2: Covers short wavelengths from 2.0 to 2.4μm, capable of measuring metal surfaces ◉ PUA5: Optimal for measuring glass surfaces, wavelength 5μm ◉ PUA8: General-purpose, suitable for a wide range of applications, wavelength 8-14μm **Other Specifications** ◉ Field of view: 15:1, 25:1, 30:1, or 75:1 ◉ Emissivity setting range: 0.1 to 1.0 ◉ Power supply: 24VDC ◉ Body dimensions: Φ27.6mm (diameter) x 61mm (length) ◉ Weight: approximately 155g ◉ Analog signal cable 1m (standard included, extendable up to 30m) *USB cable 1.8m (USB cable cannot be extended)

USB-connected compact infrared temperature sensor, no power supply needed, powered via USB bus from PC, parameter setting and data management with included dedicated software. 【Overview】 Simply install the standard included "CalexConfig" and connect to a Windows PC using a USB cable. You can easily set measurement parameters, conduct measurements, and analyze/export results in CSV format on your PC with a Plug & Play feel. 【Features】 ◎ USB data logging ◎ Excellent basic performance: accuracy ±1%, reproducibility ±0.5%, 240 msec fast response ◎ Covers measurement wavelength range of 8 to 14 μm ◎ Compact size Φ18mm x 45mm 【Other Specifications】 ◉ Field of view: - PMU21: 2:1 - PMU201: 20:1 ◉ Temperature range: -20℃ to 1000℃ ◉ Measurement wavelength range: 8-14 μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: not required ◉ Body dimensions: Φ18mm (diameter) x 45mm (length) ◉ Weight: approximately 85g ◉ USB cable length: 1.5m

Temperature range, emissivity, alarm, and other parameters can be set using a smartphone or tablet without the need for a display instrument or power supply for the instrument. ● Settings can be made using a smartphone or tablet. ● A dedicated app can be downloaded for free from Google Play (Android 4.1 to 5.1). ● Using NFC communication on Android, simply touch the sensor part to read and write data. ● Ultra-compact sensor (Φ31mm x t29mm) allows temperature measurement in tight spaces. ● Fast response time of 125 ms, high accuracy of ±1.5%. ● Voltage output (0-5V or 0-10V), or K thermocouple output. 【Other Specifications】 ◉ Field of view: 15:1 ◉ Temperature range: 0℃ to 1000℃ ◉ Measurement wavelength range: 8 to 14μm ◉ Emissivity: 0.2 to 1.0 ◉ Power supply: 24VDC (minimum 6V/10V to maximum 28VDC) ◉ Cable: 1m included (extension up to 30m possible) 【Options】 ◉ Body mounting bracket ◉ Extension cable ◉ Air purge kit

High-performance touch panel converter for easy setup, data logging, and data storage on microSD card. The PM2.2 model can also measure glossy metal surfaces. 【Overview】 With a highly visible, high-brightness touch panel display, parameters such as temperature range, emissivity, and sampling rate can be intuitively operated and set. Long-term data storage and management are possible with a microSD card. (*An option without a display is also available.) The compact sensor head, measuring φ18mm x 45mm, allows for temperature measurement in tight spaces. It employs sensors and cables with excellent noise resistance, making it suitable for integration into moving equipment such as robotic arms. The PM2.2 model uses a short wavelength of 2.2μm and can measure high temperatures (Max 2000℃) and glossy metallic surfaces. 【Features】 ◎ Wide range: -20 to 1000℃ (PM), 100 to 2000℃ (PM2.2) ◎ Excellent basic performance: Accuracy ±1%, Repeatability ±0.5%, 240msec fast response ◎ Measurement wavelength range: 8 to 14μm (PM), 2.0 to 2.2μm (PM2.2) ◎ Compact Φ18mm x 45mm

◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H) mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included for USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40 mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple

It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We can customize it to meet various specifications as per your requests. 【Features】 ● It is a semi-custom product. We will design and manufacture it according to your needs. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Supports RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.

Compact/Space-saving, High-spec 60ℓ volume, a multi-thin film experimental device that can accommodate various applications by integrating thin film modules such as evaporation, sputtering, EB, and annealing. Compact/Space-saving, High-spec thin film experimental device. Combinations possible from the following evaporation sources: - Resistance heating evaporation source x up to 4 - Organic evaporation source x up to 4 - Electron beam evaporation - 2-inch magnetron sputtering cathode x 4 - Plasma etching: can be installed in either the main chamber or the load lock chamber. 【Small Footprint/Space-saving】 - Dual rack type (MiniLab-060): 1200(W) x 590(D)mm 【Excellent Operability/Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation regardless of skill level, with a strong emphasis on safety.

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals, insulators, and other materials without impurities. It also excels in maintainability. 【Features】 - Compatible with high vacuum - Sizes: Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, no bonding required - Excellent maintainability, allowing for easy target replacement - Rich options including shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes 【Main Specifications】 ■ Compatible with RF, DC, and pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulating material: PEEK/PTFE ■ Seal material: Viton ■ High-strength magnet pack: NiFe

Plasma CVD equipment compatible with wafer sizes Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The configuration can be customized according to requirements, including mass flow gas supply systems and substrate heating heaters. 【Example of equipment configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to a maximum of 1100℃ - High-precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels

Max 1000℃, up to 3 MFC systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. High-temperature processing up to 1000℃ is possible with a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety with interlocks. The mass flow controller can be expanded to a maximum of 3 systems, allowing for firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

Multi-Target Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three target cathodes (Source1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with a dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: all operations can be performed via touch panel/PC without dispersing control - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

We have completely renewed the catalog for the MiniLab series thin film experimental equipment. 【Features of the MiniLab Series】 ◉ Supports sputtering, evaporation (resistive heating, organic, EB), annealing, plasma etching, etc. ◉ Modular design allows for flexible combinations of components (source hybrid types and multi-chamber configurations are possible) ◉ Compact, space-saving design (width 1,200 x depth 560 mm) ◉ Excellent operability: intuitive interface, with all operations centralized and managed via a touch panel. We are confident that this will be of great assistance in your research and development efforts. Please consider it.

ThermoCera Japan has updated the latest catalog for its ultra-high temperature substrate heating heaters, suitable for thin film experiments such as CVD and PVD, ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer heater controllers in both traditional standalone types and 19-inch rack-mounted versions.

4 cathodes with Φ2 inch mounted Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (Pulse DC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch MFC x 3 systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

ThermoCera Japan has updated the latest catalog for its substrate heating heaters, ideal for thin film experiments such as CVD and PVD, with ultra-high temperature substrate heating heaters ranging from 1 inch to 4 inches. ◉ Maximum operating temperature: 850°C (SH-IN), 1100°C (SH-BN) We also accommodate requests for customized products such as substrate holders, vertical lift mechanisms, substrate rotation mechanisms, and RF bias. Additionally, we offer heater controllers in both traditional stationary types and 19-inch rack mount options.

This is a flexible thin-film experimental device for R&D that achieves minimal waste, compact size, simple operation, and high cost performance by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Can be equipped with a glove box (optional, specifications to be discussed) ◉ Other options: Simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many other options available. *Please first contact us with your required specifications, and we will configure the system according to your needs.

We have released dedicated remote management software "IntelliLink" for the nanoPVD-S10A magnetron sputtering system, the nanoPVD-T15A metal/organic film deposition system, and the nanoPVD-ST15A composite thin film experimental system. In addition to the control software "IntelliDep," which allows centralized management of device operation and film formation control via the included 7" touch panel, the new optional IntelliLink enables remote management using a Windows PC. With IntelliLink, almost all operations, except for the main controls of the device (vacuum pumping, vent operation, interlock monitoring), can be performed from a PC. (1) System live monitoring (device operation status monitor) - Chamber pressure, MFC flow rate settings - Film thickness display, settings, calibration - Stage rotation, heating, shutter opening and closing operations (2) Error analysis (3) Recipe creation, saving, uploading (4) Data logging, CSV format output → data sharing with other devices ◉ Connect using the included USB cable to the Ethernet port on the back of the device.

High vacuum compatible with a variety of heater material options. Can be applied to PVD (sputtering, evaporation, EB, etc.), high-temperature vacuum annealing, high-temperature analysis substrate stages, and more. Custom-made to meet various specifications and requests. 【Features】 ● Easy replacement of the spare heater wire ● Easy installation and maintenance (M6 stud bolts, supports) 【Compatible Substrate Sizes】 ◉ Φ1 inch to Φ6 inch 【Standard Accessories】 ● Thermocouple: wire type with alumina insulated sleeve ● Mounting stud bolts 【Options】 ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.) ● Substrate holding clips ● Mounting brackets ● Substrate holders ● Tapped hole processing for holder installation ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.) ● Additional thermocouples for overheating ● Base flange, vacuum feedthrough terminal

Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + single component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three component cathodes (Source1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can reach Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersion. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Two thin film experimental devices are connected with a load lock mechanism. Different deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. Thanks to Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of sensitive materials like Teflon. (*This can also be installed in the main chamber stage.)

The MiniLab thin film experimental device allows for the construction of a compact system that minimizes waste by incorporating the optimal components and control modules according to the required deposition method and material from a wide range of options, making it semi-custom made. By equipping a modular control unit with a Plug & Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating evaporation (TE), organic evaporation (LTE), electron beam evaporation (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space-Saving】 - Single rack type (026): 590(W) x 590(D) mm - Dual rack type (060): 1200(W) x 590(D) mm - Triple rack type (125): 1770(W) x 755(D) mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.

This is a flexible thin-film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel, achieving a compact, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials up to 4), and can be equipped with a substrate heating stage for annealing devices and RF etching. A glove box storage type is also available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filaments, crucibles, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: Simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many other options available. *Please first contact us with your required specifications, and we will configure the system according to your needs.

Compact/Space-saving, High-spec 60ℓ volume multi-thin film experimental device capable of incorporating various thin film modules such as evaporation, sputtering, EB, and annealing, adaptable to various applications. Compact/Space-saving, High-spec thin film experimental device. Combinations possible from the following deposition sources: - Resistance heating deposition source x up to 4 - Organic deposition source x up to 4 - Electron beam deposition - 2-inch magnetron sputtering cathode x 4 - Plasma etching: can be installed in either the main chamber or the load lock chamber 【Small Footprint/Space-saving】 - Dual rack type (MiniLab-060): 1200(W) x 590(D)mm 【Excellent Operability/Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation regardless of skill level, with maximum safety considerations.

Compact and space-saving! Ideal for organic thin film development, all processes such as deposition, sputtering, and annealing can be seamlessly performed within a glove box. In the development processes of organic EL, organic thin film solar cells, and graphene/2D materials (two-dimensional layered inorganic nanomaterials such as transition metal dichalcogenides), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. By housing the PVD chamber within the glove box, a "oxygen and moisture-free" experimental environment for organic film applications is achieved in a compact, space-saving setting. 【Features】 ◉ A series of operations such as PVD film formation, spin coating, and hot plate baking can be performed seamlessly within the glove box without exposing them to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ capacity): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing ◉ MiniLab-090 (90ℓ capacity): Metal/insulator/organic material deposition, sputtering, RF/DC etching, annealing

Equipped with various conditions necessary to create high uniformity "high-quality" thin films required in research and development settings. The nano series is a high-performance device that condenses functionality into a compact body. It employs a robust and highly airtight stainless steel chamber that ensures a high vacuum environment and sufficient T/S adjustment distance, which are essential elements for low-defect and high-quality film formation. Additionally, all models share the IntelliDep software, which allows for intuitive and easy operation via a touch panel, making it accessible for operators of any skill level. 【nano Benchtop Compact Thin Film Experimental Equipment】 ◉ nanoPVD-S10A: RF/DC Magnetron Sputtering Device ◉ nanoPVD-T15A: Organic Film and Metal Film Deposition Device ◉ nanoPVD-ST15A: Mixed Deposition and Sputtering Composite Thin Film Experimental Device ◉ ANNEAL: Wafer Annealing Device ◉ nanoCVD: Graphene/CNT Synthesis Device ◉ nanoEM: High Vacuum EM Coater *For other detailed specifications, please contact us.

Multi-purpose, high-precision process control [Hot-wall thermal CVD device] ◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Additionally, it can be utilized for a wide range of applications as a hot-wall thermal CVD device.

Low-cost essential minimum configuration (manual control) tubular furnace, diffusion furnace, and thermal CVD applicable Vertical experimental furnace with manual lift for small substrates ranging from small samples to 3-inch wafers Ideal low-cost vertical furnace for basic experiments in university and corporate research labs 【Applications】 ◉ Thermal processing for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple thermal processing experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc. 【Main Specifications】 - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: accommodates sizes from a few millimeters to 3-inch wafers - Number of substrates: approximately 1 to 3 sheets - Quartz susceptor with manual lift: includes stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control and over-temperature), K-type bare wire (for furnace core temperature measurement)

Endless possibility_thermal engineering There is an endless demand for "heat," which is indispensable in any era, and to contribute even a little to research and development needs, we would like to introduce the latest thermal engineering and temperature measurement technologies. Our company sells heaters and experimental furnaces that support the temperature measurement equipment such as radiation temperature sensors and the basic development sector for semiconductors and electronic devices. - Ultra-high temperature substrate heating heaters for CVD and PVD vacuum thin film experiments - Ultra-high temperature compact experimental furnaces - Thin film experimental devices for research and development - Compact series thin film experimental devices - Infrared radiation temperature sensors - Various vacuum components

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating deposition source (metal deposition), an organic deposition source (organic materials), and magnetron sputtering (metal and insulating materials) are installed within the chamber, allowing for various thin film experimental setups with a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Deposition Source x2 2. Sputter Cathode + Organic Deposition Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Deposition Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inch ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating deposition (up to 2), organic deposition (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + N2, O2 can be added ◉ Connect to a Windows PC with USB port for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with 7" touch panel and PLC automatic process control

Vacuum Ultra-High Temperature Cylindrical Heater Unit Maximum Temperature 1800℃ (Graphite, C/C Composite) We will manufacture according to your requested specifications. This is a cylindrical heating unit that can be applied in high vacuum for various purposes. We can custom-make heating for crucibles containing samples, heating of metal, ceramic, and wire-shaped samples, etc., within the cylindrical heating range according to your needs. ◎ Usable Environment: In vacuum, in inert gas, etc. ◎ Heating Element: Graphite, C/C composite heater, SiC coating, PG coating, tungsten, tantalum, etc. ◎ Manufacturing Range: Heater section (up to approximately Φ150 x 100mm), introduction flange, temperature control unit ◎ Applications: Sample heating in various vacuum system process chambers, discharge plasma generation unit thermal electron gun (Lab6), rapid heating of gas supply system piping (liquid rapid vaporization) We can also manufacture custom specifications according to other requests. For details, please contact us.