Total solution service for power devices

Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution for TEM and STEM has been improved, and performance has been significantly enhanced, allowing for EDS analysis with four detectors. Additionally, it is equipped with features such as drift-corrected frame integration (DCFI), which integrates multiple frames while correcting for drift.

I will introduce the three-dimensional reconstruction of failure locations using the Slice & View function of FIB-SEM. Continuous SEM images of the structure are acquired, and the obtained images are corrected for positional misalignment between SEM images and visualized in three dimensions using 3D construction software (Avizo). By combining the position identification technique for cross-sectioning the failure location with the Slice & View function, it is possible to obtain continuous SEM images that retain the defective state and include information before and after the abnormal area.

We conduct "IOL testing of discrete semiconductors" at our company. Under normal temperature conditions, we repeatedly turn the power ON/OFF, applying stress to the device due to the heat generated by the device itself during power ON. During power OFF (cooling), forced cooling is also performed using a fan. Additionally, before conducting the tests, we use representative samples to make adjustments to reach the test temperature conditions. It is possible to adjust the current/time during heating, as well as the fan capacity/timing during cooling.

At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to 2000V. By monitoring the leakage current during the test, the degradation status of the device can be understood in real-time. Since the power supply is independent, if one device fails during the test, it does not affect the other devices. Additionally, it is possible to set a defect criterion (current value) and cut off the power supply to the defective device when a defect is determined. 【Specifications and Service Details】 ■ Test Voltage: Up to DC 2000V ■ Applied Current: Up to 14mA ■ Number of Test Devices: Up to 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to 200°C (85°C/85% in high temperature and high humidity conditions)