RAMXEED List of Products and Services

Seed Corporation is releasing an advanced general-purpose platform to accelerate the development and manufacturing of smart contact lenses. Companies, universities, and research institutions participating in this platform will be able to utilize its features for a wide range of purposes, and it is expected to lead to the social implementation of innovative services and products using smart contact lenses in various fields such as communication, entertainment, and education. (*1) *1: Quoting the press release from Seed Corporation Reference URL: https://ssl4.eir-parts.net/doc/7743/announcement/106496/00.pdf RAMXEED provides RF communication chips and 16-bit ADC chips as an ASSP chipset, leveraging our analog circuit technology on this platform. These chipsets offer scalability, allowing for additional functionality by adding new chips, and can collect and process various data as edge devices when combined with various sensors, thus accelerating utilization beyond just smart contact lenses.

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FeRAM (Ferroelectric RAM) is a non-volatile memory characterized by high-speed writing, high rewrite cycles, and low power consumption. This product is further optimized for rotary encoder applications as it incorporates data processing (Binary Counter function) within the chip. Additionally, the operating temperature has been extended to up to 125°C. 【Features】 ■ High-speed writing and high rewrite cycles ■ Industry-leading low power consumption for extended battery life ■ Built-in binary counter function ■ Operating temperature: -40°C to 125°C ■ Ideal for compact product designs *For more details, please check the materials from the [PDF download]. Feel free to contact us with any inquiries.

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Our company offers automotive-grade FeRAM with an I2C interface that guarantees low operating current and 10 trillion data rewrite cycles in high-temperature environments of 125°C. We have newly added the maximum capacity 512K-bit FeRAM 'MB85RC512LY' to our lineup. In addition to automotive applications such as ADAS (Advanced Driver Assistance Systems), it is also suitable for industrial robots and more. 【Features】 ■ Operates at a low supply voltage of 1.7V to 1.95V ■ Operating current is a maximum of 0.4mA when operating at up to 3.4MHz ■ Guarantees 10 trillion data rewrite cycles over a temperature range of -40°C to +125°C ■ Well-suited for applications requiring real-time data recording *For more details, please refer to the materials. Feel free to contact us with any inquiries.

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Our company has responded to the demands of customers in the automotive and industrial sectors who require memory that guarantees operation in high-temperature environments by developing and providing automotive-grade FeRAM products since 2016. These products not only extend the operating temperature of conventional products to 125°C but also improve reliability by re-evaluating the design of the internal circuits. Furthermore, they comply with the AEC-Q100 reliability testing standards and support PPAP. In applications such as industrial machinery that incorporate motor mechanisms, electronic components that can guarantee operation in high-temperature environments are required due to heat generated by the motors. Our company offers high-reliability, high-performance FeRAM capable of operating at 125°C to meet the needs of these markets. **Features of 125°C Operating FeRAM:** - Clears high-reliability evaluations to meet the high-quality standard known as automotive grade AEC-Q100 Grade 1 - SPI interface - Memory capacity: from 64K bits to 4M bits *For more details on the product lineup, please visit the site below. Feel free to contact us with any inquiries.*

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Our "Batteryless Solution" proposes the construction of systems that eliminate power wiring and batteries from the edge terminal side of systems that typically require wired power supply or batteries. This solution relies on low-power wireless LSI (UHF band RFID LSI) and can be realized by utilizing our FeRAM-equipped LSI. We offer batteryless solutions using FeRAM-equipped LSI for terminals and tags used in factories, logistics, and stores. If you have the following challenges with wired terminals or terminals equipped with batteries, please feel free to consult us through our website. ■ Challenges with display terminals: Changing batteries is cumbersome. ■ Challenges in production factories: Wiring power cables to sensing terminals is troublesome. ■ Challenges with logistics labels: Rewriting inventory management labels is inconvenient. *You can view the interview article about the development story of the "Batteryless Electronic Paper Tag" from the "PDF Download" button.

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The MB85RQ8MLX is a non-volatile memory that achieves a bandwidth of 54MB/s, comparable to SRAM with an access time of 45ns, by incorporating a high-speed serial interface known as Quad SPI. It can replace parallel interface SRAM without compromising memory performance. Additionally, it allows for a significant reduction in pin count compared to traditional parallel interfaces, simplifying the wiring layout on the circuit board and contributing to BOM cost reduction. We are also developing an 8M-bit Quad SPI FeRAM (MB85RQ8MX) that operates at 3.3V (2.7V to 3.6V). 【Features】 - Bit configuration: 1,048,576 words × 8 bits - Operating frequency: 108MHz (single read using FSTRD command) - Write/read endurance: 10^13 times/byte - Data retention characteristics: 10 years (+105°C) - Operating current: 18mA @ Quad I/O 108MHz *For more details, please refer to the PDF document or feel free to contact us.

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The "MB85R8M2TA" is a parallel interface FeRAM that operates with a wide range power supply voltage of 1.8V to 3.6V. It achieves approximately 30% faster access speed compared to our conventional products, while reducing operating current by 10%, balancing high-speed operation with low power consumption. It is well-suited for industrial machinery that requires high-speed operation, where SRAM has traditionally been used. 【Features】 ■ High rewrite endurance (high number of rewrite guarantees) ■ High-speed writing ■ Low power consumption ■ Over 20 years of mass production experience *For more details, please refer to the PDF document or feel free to contact us.

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"FeRAM" is a type of semiconductor memory, also known as ferroelectric memory, which is a non-volatile memory that retains data even when the power is turned off. This document introduces the "Basics of FeRAM." It includes an overview of "FeRAM," case studies of "FeRAM" business negotiations, "FeRAM" achievements, features of "FeRAM," and challenges and solutions. It is a useful book, and we encourage you to read it. [Contents] ■ Overview of FeRAM ■ Case studies of FeRAM business negotiations ■ Achievements of FeRAM ■ Features of FeRAM ■ Challenges and solutions *For more details, please refer to the PDF document or feel free to contact us.

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I would like to introduce the "FeRAM business case." In automotive applications such as car navigation systems and dash cameras, there is a demand for "continuous real-time data recording" in memory. The required features are high rewrite endurance, non-volatility, and fast write speeds. Our product is a memory that possesses these required features. "Want to frequently acquire data, but cannot due to memory rewrite limitations." "It is difficult to implement data protection measures during power interruptions or outages while writing data." If you have such challenges, please consider FeRAM. 【Business Case (Excerpt)】 <For Automotive Applications> ■ Requirements for Memory - Continuous real-time data recording / Data protection during accidents ■ Required Features - High rewrite endurance / Non-volatility / Fast write speeds *For more details, please refer to the PDF document or feel free to contact us.

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"I have seen a product called FeRAM in web articles and advertisements, but I don't really understand what it is," or "I know that FeRAM is a type of memory, but I want to know what applications it is actually used for," are voices we hear from customers. In this document, we will introduce the answers to the aforementioned questions: "What is FeRAM?" and "In what applications is FeRAM used?" Please feel free to download and take a look. [Contents] ■ Overview of FeRAM ■ Lineup of FeRAM ■ Features of FeRAM ■ Achievements of FeRAM ■ Case studies of FeRAM in business ■ Solutions provided by FeRAM ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

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The "MB85RC1MT," our largest 1M-bit FeRAM with an I2C interface, guarantees 10 trillion write cycles, making it an ideal product for FA control devices, measurement meters, and industrial machinery that require frequent rewrites, such as real-time logging. We offer a wide range of FeRAM products with both I2C and SPI serial interfaces, enabling us to provide the optimal non-volatile memory solutions to meet our customers' needs. ■ Features This product is the I2C interface 1M-bit (128K words x 8 bits) FeRAM "MB85RC1MT." It operates at a low voltage of 1.8V to 3.3V within a temperature range of -40°C to +85°C. In addition to a standard operating frequency of 1MHz, comparable to EEPROM, it supports a high-speed mode for reading and writing at 3.4MHz. With a rewrite guarantee of 10 trillion cycles, which far exceeds that of general-purpose EEPROM, it strongly supports frequent data rewrites, such as real-time logging, even in I2C products.

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This product is a memory developed in response to customer demands for "increased rewrite cycles," "shorter rewrite times," and "increased memory capacity" due to changes in the environment, such as the expansion of edge computing and the increase in the amount of sensor data. It is suitable for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices. ■ Main Specifications - Product Name: MB85RS4MT - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 40MHz - Operating Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles - Package: 8-pin SOP

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This product operates on a single power supply of 1.8V and features a quad SPI interface with four input/output pins, achieving a data transfer speed of 54MB per second. This high-speed operation and the characteristics of non-volatile memory make it ideal for use in networking, RAID controllers, and industrial computing. ■ Main Specifications - Product Name: MB85RQ4ML - Memory Capacity (Configuration): 4M bits (512K x 8 bits) - Interface: SPI / Quad SPI - Operating Power Supply Voltage: 1.7V to 1.95V (single supply) - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 16-pin SOP

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This product is a non-volatile memory that retains data even when the power is turned off. It is offered in a 44-pin TSOP package compatible with general-purpose SRAM, allowing for the replacement of SRAM with this FeRAM in industrial machinery, business equipment, and medical devices without significantly altering the design of the circuit board. This eliminates the need for a battery for data retention, contributing to a reduction in the mounting area of the final product's circuit board, power savings, and overall cost reduction. ■ Main Specifications - Capacity (Configuration): 4M bits (256K x 16 bits) - Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Data Retention Characteristics: 10 years (+85℃) - Access Time Address Access Time: 150ns (Min) /CE Access Time: 75ns (Max) - Operating Current Operating Supply Current: 20mA (Max) Standby Current: 150µA (Max) Sleep Current: 20µA (Max) - Package: 44-pin TSOP

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The MB85RS1MT is a compact size of 3.09 x 2.28 x 0.33mm. When comparing the implementation area of both, the WL-CSP corresponds to about 23% of the SOP, allowing for a reduction of approximately 77% in implementation area. Furthermore, this compact package achieves a thickness of 0.33mm, which is about half that of a credit card, enabling a reduction of about 95% in volume compared to SOP. By introducing this FeRAM into wearable devices that frequently log real-time data, it becomes possible to extend or miniaturize battery life. ■ Main Specifications - Product Name: MB85RS1MT - Memory Capacity (Configuration): 1M bits (128K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Supply Voltage: 1.8V to 3.6V - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (at +85°C) - Package: 8-pin WL-CSP, 8-pin SOP

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"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the 'MB85RS4MTY' is a 4M-bit FeRAM developed to meet the demand for larger capacity, building on the 2M-bit FeRAM "MB85RS2MTY." It can handle up to 10 trillion data write cycles even in high-temperature environments of 125°C, making it suitable for automotive applications, such as advanced driver-assistance systems (ADAS), as well as for industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.

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The MB85RS2MLY guarantees 10 trillion data rewrites in a temperature range of -40℃ to +125℃. This characteristic makes it suitable for applications that require real-time data recording. For example, it is possible to record data every 0.1 seconds for 10 years (over 3 billion times). Additionally, the reliability testing of this product complies with AEC-Q100 Grade 1, a high-quality standard known as automotive grade. Therefore, from both the perspective of data write cycles and reliability, this product is well-suited for applications that continuously detect and record vehicle conditions, such as ADAS. ■ Main Specifications - Product Name: MB85RS2MLY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.7V to 1.95V - Operating Temperature Range: -40℃ to +125℃ - Guaranteed Write/Read Cycles: 10 trillion (10^13) - Package: 8-pin SOP, 8-pin DFN - Quality Standard: AEC-Q100 Grade 1 compliant

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We have developed the 2M-bit FeRAM "MB85RS2MTY," which has the largest memory capacity in the FeRAM family guaranteed to operate at 125°C, and we have started providing evaluation samples. This product is a non-volatile memory that guarantees 10 trillion write cycles even in high-temperature environments of 125°C. It allows for continuous recording of real-time driving data or position data, and data is not lost even during power outages. ■ Main Specifications - Product Name: MB85RS2MTY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40°C to +125°C - Write/Read Guarantee Cycles: 10 trillion (10^13 cycles) - Package: 8-pin SOP, 8-pin DFN - Quality Standards: AEC-Q100 Grade 1 compliant ■ Example Applications - Automobiles that become high-temperature due to heat generated by engines or motors - Industrial robots

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Our battery-less solution utilizes the power supply mechanism of RFID equipped with our non-volatile memory FeRAM products, enabling devices added to the tag side to operate without a battery. We provide solutions tailored to our customers' applications. ■ Benefits of the Battery-less Solution <Advantages for Users> - No need for battery replacement (no purchase or storage required) - Improved mobility due to cable-free operation, allowing for greater flexibility in placement <Advantages for Equipment Development Manufacturers> - Increased design freedom (thinner and smaller) by reducing the need for battery boxes - Easier waterproofing and dustproofing processes

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Our company has developed the 64K-bit FeRAM "MB85RS64TU" as a memory that guarantees operation in extremely low temperature environments of -55°C, and we are providing mass-produced products. This product features a wide operating voltage range of 1.8V to 3.6V and is a non-volatile memory capable of operating at lower temperatures than competing memories. It guarantees 10 trillion data rewrite cycles even at -55°C, making it particularly suitable for industrial machinery used in field devices for the extraction of natural gas and oil in extremely cold regions. ■ Main Specifications ・ Product Name: MB85RS64TU ・ Capacity (Memory Configuration): 64K bits (8K x 8 bits) ・ Interface: SPI (Serial Peripheral Interface) ・ Operating Frequency: Up to 10MHz ・ Operating Supply Voltage: 1.8V to 3.6V ・ Operating Temperature Range: -55°C to +85°C ・ Write/Read Guarantee Cycles: 10 trillion cycles ・ Package: 8-pin SOP, 8-pin SON ■ Application Examples This FeRAM can be used not only in low-temperature environments but also in general measuring instruments, flow meters, and industrial fields such as robotics.

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Our company has developed the "MB85RS64VY," a 64K-bit FeRAM with an SPI interface, as the first product in the FeRAM product family guaranteed to operate at 125°C with a power supply voltage of 5V. ■ Main Specifications - Product Name: MB85RS64VY - Capacity (Memory Configuration): 64K bits (8K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 33MHz - Operating Power Supply Voltage: 2.7V to 5.5V - Operating Temperature Range: -40°C to +125°C - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Package: 8-pin SOP, 8-pin SON ■ Application Examples It is ideal for automotive electronic components and industrial machinery that use 5V operating electronic parts, such as temperature sensors.

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Our company has developed the 8M-bit FeRAM "MB85R8M2T," which has the largest memory capacity in our FeRAM product lineup. This product operates in a wide range of 1.8V to 3.6V and features a non-volatile memory with an SRAM-compatible parallel interface. It addresses the demand for increased memory capacity beyond the previous maximum of 4M bits FeRAM and the reduction of battery usage for power interruption measures in already deployed 8M-bit SRAM. By replacing the SRAM used in industrial machinery applications such as control devices, robots, and machine tools with this FeRAM, it eliminates the need for batteries and reduces the mounting area of the memory section by approximately 90%, contributing to a reduction in total costs. ■ Main Specifications - Product Name: MB85R8M2T - Capacity (Memory Configuration): 8M bits (512K x 16 bits) - Interface: Parallel Interface - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40°C to +85°C - Write/Read Endurance: 10 trillion cycles - Package: 48-pin FBGA (8 mm × 6 mm)

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Our company will begin offering the world's largest capacity 8M-bit ReRAM, "MB85AS8MT," as a mass-produced product. This product operates with a wide power supply voltage range of 1.6V to 3.6V and features a non-volatile memory with an SPI interface that operates with EEPROM-compatible commands and timing. A significant feature is that the average read current at 5MHz operation is very low at 0.15mA, which minimizes battery consumption in battery-powered applications where data read operations are frequent. ■ Main Specifications - Product Name: MB85AS8MT - Memory Capacity (Configuration): 8M bits (1M words x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Power Supply Voltage: 1.6V to 3.6V - Operating Frequency: Up to 10MHz - Read Operation Current: 0.15mA (average value at 5MHz operation) - Write Cycle Time: 10ms - Page Size: 256Bytes - Write Endurance: 1,000,000 times / Read Endurance: Infinite - Data Retention Characteristics: 10 years (+85°C) - Package: 11-pin WL-CSP, 8-pin SOP

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Our company, in collaboration with E Ink Holdings Inc., has developed a technology that allows for the rewriting of electronic paper displays without batteries through UHF band wireless power transmission. Unlike NFC for close-range communication, this UHF band technology significantly improves the communication distance during data rewriting, which was previously limited to close proximity, and is expected to create new applications that combine electronic paper with UHF band RFID. ■Features This battery-less electronic paper tag technology is made possible by our UHF band RFID LSI "MB97R8110" designed for battery-less solutions. The user memory area of the MB97R8110 utilizes FeRAM, which features non-volatility, high-speed writing, and low power consumption. Conventional electronic paper tags could only display data stored in built-in memory, but by using FeRAM, it is now possible to transfer image data at will and rewrite it in a short time.

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Our company has been providing high-quality and high-performance memory LSI, which is essential for high-function electronic devices, for many years. In recent years, we have been offering memory products that are compact, high-performance, and low-power, as well as proposing optimal solutions that combine these memory products.

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FeRAM (Ferroelectric Random Access Memory) is a non-volatile memory with the characteristics of high-speed operation. It does not require battery backup for data retention and has advantages in terms of high-speed writing, high rewrite endurance, and low power consumption compared to other non-volatile memories such as EEPROM and flash memory. [Features] - Non-volatile: No battery backup required - High-speed writing: No erase operation needed - High rewrite endurance: Guaranteed for 10 trillion cycles (with some exceptions) *For more details, please download the PDF or feel free to contact us.

• Parts and Materials