4M-bit FeRAM "MB85RS4MT" suitable for real-time data rewriting such as location information from a drive recorder.
This product is a memory developed in response to customer demands for "increased rewrite cycles," "shorter rewrite times," and "increased memory capacity" due to changes in the environment, such as the expansion of edge computing and the increase in the amount of sensor data. It is suitable for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices. ■ Main Specifications - Product Name: MB85RS4MT - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 40MHz - Operating Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles - Package: 8-pin SOP
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basic information
The operating voltage of this product has a wide range from 1.8V to 3.6V, allowing the electronic components around the memory integrated in the customer's product to support either 1.8V or 3.6V operation. The operating current is a maximum of 250μA at 1MHz operation, and the standby current is very low at a maximum of 50μA, achieving low power consumption. The package is an 8-pin SOP that can replace existing EEPROMs, enabling customers to switch to this new product without significantly changing the design of their products.
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Applications/Examples of results
This FeRAM is suitable for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices.
Detailed information
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The rewrite guarantee count of this product is approximately 10 trillion times, which is about 10 million times higher than that of the same non-volatile memory EEPROM, so the rewrite count will not become a design bottleneck. It is suitable as memory for frequently recording sensor information in edge computing.
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In data writing operations, EEPROM and flash memory require not only writing time but also sector erase time, whereas FeRAM achieves high-speed writing by allowing only overwriting without erasure. This enables FeRAM to protect the data being written even if a voltage drop occurs during the writing process, such as a momentary interruption.
Company information
Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.