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  6. System memory

System memory

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last updated:Jun 07, 2024

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
  • Official site

Trust and Performance - High Quality, High Reliability Memory

Our company has been providing high-quality and high-performance memory LSI, which is essential for high-function electronic devices, for many years. In recent years, we have been offering memory products that are compact, high-performance, and low-power, as well as proposing optimal solutions that combine these memory products.

    Parts and Materials
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System memory

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  • Related Link - https://www.fujitsu.com/jp/group/fsm/products/inde…

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basic information

Our company's system memory ■FeRAM (Ferroelectric RAM) https://www.fujitsu.com/jp/group/fsm/products/FeRAM/ ■ReRAM (Resistive Random Access Memory) https://www.fujitsu.com/jp/group/fsm/products/reram/ ■NRAM http://www.fujitsu.com/jp/group/fsl/resources/news/press-releases/2016/0831.html

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Applications/Examples of results

For information on the use of system memory, please watch the product introduction video.

Detailed information

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    Non-volatile memory FeRAM (Ferroelectric RAM: Ferroelectric Memory) has features such as high-speed writing, high rewrite cycles, and low power consumption compared to conventional non-volatile memories like EEPROM and flash memory. Applications: card field, industrial field, medical, wearable devices, robots, drones, etc.

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    Non-volatile memory ReRAM (Resistive Random Access Memory) changes resistance by applying voltage to a metal oxide film, recording data as "0" and "1" based on the difference between high resistance and low resistance states. The read current is among the lowest in the industry. Furthermore, the read endurance is unlimited, making it ideal for read-intensive applications.

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    Non-volatile memory NRAM using carbon nanotubes We are advancing the development of non-volatile memory "NRAM" with the aim of achieving thousands of times the rewrite endurance and rewrite speed compared to embedded Flash memory, and ultimately replacing DRAM with non-volatile memory in the future.

News about this product(5)

8-pin DFN package of MB85RS2MLY

Developed a 2M-bit FeRAM that guarantees operation at 125℃ with a power supply voltage of 1.8V.

  • Product news

Non-volatile memory optimized for advanced automotive markets such as ADAS Fujitsu Semiconductor Memory Solutions, Inc. has added the 2M-bit FeRAM "MB85RS2MLY," which operates at a low voltage of 1.8V, to its lineup of 125°C operating FeRAM family. This product is a memory with an SPI interface that operates at a low supply voltage of 1.7V to 1.95V. Evaluation samples are currently available, with mass production scheduled for June. This new product is ideal for electronic control units that require low voltage operation in advanced automotive markets such as advanced driver-assistance systems (ADAS). ■ Main Specifications Product Name: MB85RS2MLY Capacity (Memory Configuration): 2M bits (256K x 8 bits) Interface: SPI (Serial Peripheral Interface) Operating Frequency: 50MHz (maximum) Operating Supply Voltage: 1.7V to 1.95V Operating Temperature Range: -40°C to +125°C Write/Read Endurance: 10 trillion cycles (10^13 cycles) Package: 8-pin SOP, 8-pin DFN Quality Standards: AEC-Q100 Grade 1 compliant

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MB85R8M2T FBGA package

Developed an 8M-bit product, which is the maximum memory capacity for non-volatile memory FeRAM.

  • Product news

Fujitsu Semiconductor Limited has developed the 8M-bit FeRAM "MB85R8M2T," which has the largest memory capacity in its FeRAM product lineup, and has started mass production this month. This product operates in a wide range of 1.8V to 3.6V and features a non-volatile memory with an SRAM-compatible parallel interface. It meets the demand for increased memory capacity beyond the previous maximum of 4M bits FRAM and addresses the requirement for reducing the battery used for power interruption measures in already deployed 8M-bit SRAM. By replacing the SRAM used in industrial applications such as control devices, robots, and machine tools with this FeRAM, it eliminates the need for batteries, reduces the mounting area of the memory section by approximately 90%, and contributes to overall cost reduction.

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8-pin DFN (front and back) of MB85RS4MTY

Developed a 4M-bit FeRAM with a maximum memory capacity operating at 125℃.

  • Product news

■Non-volatile memory for automotive and industrial machinery that guarantees reliability in high-temperature environments The “MB85RS4MTY” is a non-volatile memory with a doubled memory capacity of 4M bits and operates with an SPI interface at a wide power supply voltage range of 1.8V to 3.6V. Even in high-temperature environments of 125°C, the operating current is kept to a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30µA, contributing to low power consumption in environmentally conscious systems. ■Main specifications - Product name: MB85RS4MTY - Capacity (memory configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating frequency: 50MHz (maximum) - Operating power supply voltage: 1.8V to 3.6V - Operating temperature range: -40°C to +125°C - Write/read guarantee cycles: 10 trillion cycles - Package: 8-pin DFN, 8-pin SOP

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Fujitsu Semiconductor Memory Solutions

Renewal of the FeRAM and ReRAM product website.

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Fujitsu Semiconductor Memory Solutions has renewed its website for FeRAM and ReRAM products.

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RAMXEED

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)

Information and Communications

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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.

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