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  6. 4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being provided.

4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being provided.

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last updated:Jun 07, 2024

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
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It is possible to rewrite data up to 10 trillion times in high-temperature environments of up to 125°C. Suitable non-volatile memory for automotive and industrial machinery applications.

"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the 'MB85RS4MTY' is a 4M-bit FeRAM developed to meet the demand for larger capacity, building on the 2M-bit FeRAM "MB85RS2MTY." It can handle up to 10 trillion data write cycles even in high-temperature environments of 125°C, making it suitable for automotive applications, such as advanced driver-assistance systems (ADAS), as well as for industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.

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fig_02_w800.jpg

4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being provided.

fig_02_w800.jpg
fig_02_w800.jpg
  • Related Link - https://www.fujitsu.com/jp/group/fsm/products/fram…

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basic information

【About FeRAM】 It is a non-volatile memory that retains data even when the power is off, while also incorporating the advantages of volatile memory such as high rewrite endurance and fast writing speeds. The structure of storing data in ferroelectric materials allows for up to 10 trillion data rewrite cycles. Additionally, due to the short writing time, it consumes less power, and no current is needed for data retention. Replacing EEPROM and SRAM is expected to solve various challenges. *For more details, please refer to the materials. Feel free to contact us with any inquiries.

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Suitable for in-vehicle applications represented by Advanced Driver Assistance Systems (ADAS) and for industrial robots.

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Model number overview
MB85RS4MTY The 4M-bit FeRAM, which has the largest memory capacity among FeRAM products guaranteed to operate at 125℃.

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Started mass production of 4M-bit FeRAM operating at 125°C in accordance with automotive grade standards.

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Fujitsu Semiconductor Memory Solution Limited has started mass production of the 125°C operating 4M-bit FeRAM "MB85RS4MTY" from this month. This product complies with the high-quality standard AEC-Q100 Grade 1, known as automotive grade, making it suitable for advanced driver assistance systems (ADAS) and high-performance industrial robots that require high reliability.

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RAMXEED

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)

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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.

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