Non-volatile memory suitable for advanced automotive markets such as ADAS.
The MB85RS2MLY guarantees 10 trillion data rewrites in a temperature range of -40℃ to +125℃. This characteristic makes it suitable for applications that require real-time data recording. For example, it is possible to record data every 0.1 seconds for 10 years (over 3 billion times). Additionally, the reliability testing of this product complies with AEC-Q100 Grade 1, a high-quality standard known as automotive grade. Therefore, from both the perspective of data write cycles and reliability, this product is well-suited for applications that continuously detect and record vehicle conditions, such as ADAS. ■ Main Specifications - Product Name: MB85RS2MLY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.7V to 1.95V - Operating Temperature Range: -40℃ to +125℃ - Guaranteed Write/Read Cycles: 10 trillion (10^13) - Package: 8-pin SOP, 8-pin DFN - Quality Standard: AEC-Q100 Grade 1 compliant
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basic information
We have added the 2M-bit FeRAM "MB85RS2MLY," which operates at a low voltage of 1.8V, to our lineup of FeRAM family products that operate at 125°C. This product is a memory with an SPI interface that operates at a low supply voltage of 1.7V to 1.95V. We are currently providing evaluation samples and mass-produced units. This new product is well-suited for electronic control units in advanced automotive markets, such as advanced driver-assistance systems (ADAS), where low voltage operation is required.
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Suitable for electronic control units that require low voltage operation in advanced automotive markets such as advanced driver-assistance systems (ADAS).
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Model number | overview |
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MB85RS2MLY | 2M-bit FeRAM operating at 125℃ and 1.8V low voltage |
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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.