High-quality, high-reliability memory with a rich track record of mass production.
FeRAM (Ferroelectric Random Access Memory) is a non-volatile memory with the characteristics of high-speed operation. It does not require battery backup for data retention and has advantages in terms of high-speed writing, high rewrite endurance, and low power consumption compared to other non-volatile memories such as EEPROM and flash memory. [Features] - Non-volatile: No battery backup required - High-speed writing: No erase operation needed - High rewrite endurance: Guaranteed for 10 trillion cycles (with some exceptions) *For more details, please download the PDF or feel free to contact us.
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【Adoption Examples】 ■In-vehicle ■Industrial machinery ■Consumer devices ■IC cards ■Medical devices (X-ray equipment, CT scans, etc.) *For more details, please download the PDF or feel free to contact us.
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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.
![[Information] Basics of FeRAM](https://image.www.ipros.com/public/product/image/729/2000609897/IPROS28233502543096784307.png?w=280&h=280)
