analysis(si) - List of Manufacturers, Suppliers, Companies and Products

analysis Product List

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OBIRCH analysis of SiC devices using short-wavelength lasers.

OBIRCH analysis of SiC devices using short-wavelength lasers.

Since semiconductors have different physical properties, new methods are required for failure analysis!

Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with lower energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of a pseudo-leak. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.

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Backside light emission analysis of SiC devices

Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis for the faulty area!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu Office in 1993, we have cultivated our own unique analysis and analytical techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 - OBIRCH analysis supports not only Si but also SiC and GaN devices. - FIB processing is possible from either side. - Visualization of the depletion layer formed at the PN junction. - Elemental analysis such as EDS and EELS is also supported. *For more details, please refer to the PDF document or feel free to contact us.

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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for Analysis - Backside Polishing - Supports various sample forms. Si chip size: 200um to 15mm square ■ Defective Area Identification - Backside IR-OBIRCH Analysis / Backside Emission Analysis - IR-OBIRCH Analysis: Supports up to 100mA/10V and 100uA/25V Emission Analysis: Supports up to 2kV * Covers a wide range of defect characteristics such as low-resistance shorts, micro-leaks, and high-voltage breakdown failures. ■ Pinpoint Cross-Section Observation of Leak Areas - SEM/TEM - Select SEM or TEM observation based on the predicted defects, allowing for pinpoint physical observation and elemental analysis of leak defect areas.

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Analysis of good LCD panels

Analysis of good LCD panels

Check the quality status of LCD components and products! We will analyze the structures of the LCD panel using our analytical methods and expertise!

At AITES, we conduct quality analysis of LCD components/products, confirming the quality status of products based on our expertise in LCD technology. The target panels include SEG-LCD, AM-LCD (a-Si TFT / LTPS TFT), OLED for automotive, monitors, mobile devices, and more. We perform quality analysis using our analytical methods on the various structures of liquid crystal panels. 【Analysis Details (Excerpt)】 <Reliability/Lighting Tests> ■ Classification - Reliability Testing - Lighting Inspection ■ Analytical Methods - Oven Drive Testing - Visual Inspection *For more details, please refer to the PDF document or feel free to contact us.

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Analysis of semiconductor diffusion layers using sMIM

Analysis of semiconductor diffusion layers using sMIM

Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, making it effective for analyzing the diffusion layer.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) is characterized by signals that have a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from the reflectivity consists of the oxide film capacitance and the depletion layer capacitance. By utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, and GaAs. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of the depletion layer. *For more details, please refer to the PDF materials or feel free to contact us.

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  • Analysis and prediction system

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

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