Analysis of semiconductor diffusion layers using sMIM

Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, making it effective for analyzing the diffusion layer.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) is characterized by signals that have a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from the reflectivity consists of the oxide film capacitance and the depletion layer capacitance. By utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, and GaAs. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of the depletion layer. *For more details, please refer to the PDF materials or feel free to contact us.

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