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Analysis of semiconductor diffusion layers using sMIM

Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, making it effective for analyzing the diffusion layer.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) is characterized by signals that have a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from the reflectivity consists of the oxide film capacitance and the depletion layer capacitance. By utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, and GaAs. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of the depletion layer. *For more details, please refer to the PDF materials or feel free to contact us.

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  • Analysis and prediction system

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Crystal analysis of Cu using the EBSD method.

Observe the changes before and after compression on the copper plate! You can compare the half-life of the crystal grain size before and after compression.

The EBSD (Electron Backscatter Diffraction) method obtains orientation information of individual crystals from the electron diffraction patterns generated by electron beam irradiation and maps this information. Furthermore, it is a technique for investigating not only crystal orientation (texture) but also material microstructural states such as crystal grain distribution and stress-strain as quantitative and statistical data. In the observation of changes before and after compression of a Cu plate, IQ maps, GROD maps, and IPF maps (in the Axis 3 direction) can be used to compare the half-life of crystal grain size before and after compression. 【Features】 ■ Obtains and maps orientation information of individual crystals ■ Investigates material microstructural states such as crystal orientation, crystal grain distribution, and stress-strain *For more details, please refer to the PDF materials or feel free to contact us.

  • Electrical Equipment Testing
  • Other analytical equipment

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Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.

  • Other analytical equipment

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Narrowing down defective areas using the EBAC (Absorption Current) method.

"SEM images" and "absorption current images (current sensing)" etc.! It identifies open defects in wiring and areas with high resistance defects.

Our company provides analysis and reliability evaluation services. In the "Narrowing Down Defective Areas Using the EBAC (Absorbed Current) Method," we identify open defects and high-resistance areas in wiring using the EBAC method with a nano-probe and high-sensitivity amplifier. By sensing the absorbed current as voltage, we can obtain a contrast based on the resistance voltage drop within the wiring, allowing us to detect high-resistance defects in TEGs such as via chains. [Analysis Examples Using the EBAC Method] ■ SEM Images ■ Overlaid Images ■ Absorbed Current Images (Current Sensing) ■ Absorbed Current Images (Voltage Sensing) *For more details, please refer to the PDF document or feel free to contact us.

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EBSD analysis of flexible printed circuits (FPC)

We will introduce EBSD analysis that reveals areas where distortion has accumulated in the wiring of the bending section!

We will introduce the EBSD analysis of flexible printed circuits (FPC). Regarding flexible circuits used in products with movable parts or bending mechanisms, we conducted a verification using EBSD to check for differences in the Cu wiring between the bending section and the fixed section. As a result, while no significant abnormalities or differences were observed in the optical images of the wiring in the bending and fixed sections, the EBSD analysis revealed areas where strain is accumulated in the wiring of the bending section and locations where low-angle grain boundaries are concentrated. [Analysis Content] ■ Appearance of the flexible circuit and optical images of Cu wiring - Appearance of the flexible circuit - Wiring in the bending section - Wiring in the fixed section ■ Comparison of Cu wiring in the bending and fixed sections using EBSD - Wiring in the bending section - Wiring in the fixed section *For more details, please refer to the PDF document or feel free to contact us.

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LED failure analysis

Applying advanced sample preparation techniques and failure analysis equipment for semiconductors! Investigating the causes of non-lighting and brightness degradation.

In our "LED Failure Analysis," we conduct failure analysis of LEDs using advanced sample preparation techniques and semiconductor failure analysis equipment to investigate the causes of non-lighting and brightness degradation. In the "LED Defect Mode Isolation," we performed lighting tests after lens polishing and observed the resin of the LED, polishing it to stages a, b, and c, conducting lighting observations for (a) and (b), and optical observations of the chip through the resin for (c). Additionally, we also have categories such as "electrically normal," "open, high resistance," etc. 【Initial Diagnosis Items for LED Packages】 ■ Electrical characteristic measurement ■ Appearance observation ■ Lens polishing/package internal optical observation ■ Lighting test (brightness distribution observation) *For more details, please refer to the PDF materials or feel free to contact us.

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Analysis of Li-ion battery separators

I confirmed the blocking function of polymer melting at high temperatures!

We conducted material analysis of the separator used in commercially available Li-ion batteries using FT-IR analysis, and confirmed its function of blocking polymer melting at high temperatures. The document presents the material analysis of Li-ion battery separators and observations of changes in the separator's condition under high-temperature environments, using graphs and photographs. [Analysis Overview] ■ Material analysis of Li-ion battery separators ■ Observation of changes in the condition of the separator under high-temperature environments - The condition changes of the separator were observed over time at a constant temperature of 135°C using FIB/SEM. *For more details, please refer to the PDF document or feel free to contact us.

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Structural analysis of prismatic Li-ion batteries.

Observation using optical microscopy and ultra-low acceleration FE-SEM! Detailed structural analysis and elemental analysis are possible.

By mechanically polishing commercially available rectangular Li-ion batteries and observing them with optical microscopy and ultra-low acceleration FE-SEM, detailed structural analysis and elemental analysis can be performed. The materials introduce the overall structure of the Li-ion battery and detailed structural observations of the Li-ion battery using SEM and ultra-low acceleration FE-SEM, accompanied by photographs. [Analysis Overview] ■ Overall structure of the Li-ion battery and SEM observation ■ Detailed structural observation of the Li-ion battery using ultra-low acceleration FE-SEM *For more details, please refer to the PDF materials or feel free to contact us.

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Structural analysis of nylon 6.10

We will elucidate the characteristics at the molecular level using our FT-IR and thermal decomposition GC-MS!

At AITES, we are conducting a structural analysis of Nylon 6.10. Nylon possesses flexibility and a texture similar to silk, while also having high strength and durability that natural fibers lack, being "stronger than steel and finer than spider silk." We will elucidate these characteristics at the molecular level using our FT-IR and pyrolysis GC-MS. 【Nylon 6.10 Interfacial Polymerization Reaction Mechanism】 1. Electron withdrawal by chlorine leads to a deficiency of electrons in adjacent carbon. 2. Non-bonding electrons from amine attack the carbon nucleophilically. 3. An oxygen atom is activated to form an unstable intermediate. 4. Hydrogen chloride is eliminated, forming an amide bond. 5. Interfacial polymerization progresses, resulting in polymerization. *For more details, please refer to the PDF document or feel free to contact us.

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LCD Panel Analysis Data Collection

If you're having trouble with LCD analysis, we at ITES are here to help you find a solution!

Are you struggling with LCD analysis? We, at Aites, are here to help you find a solution! Structural Analysis: We evaluate and report on potential issues related to characteristics and structure in FPD products and advanced technologies that are constantly evolving. Failure Analysis: We approach and investigate the causes of manufacturing defects in increasing overseas products through the shortest route. Reliability Testing: Based on your objectives and needs, we propose the optimal reliability testing methods and conditions using our extensive know-how. [Contents] ■ Did you know? What is a display? ■ Panel analysis case studies ■ Tell me more! Aites' LCD analysis ■ Aites can perform these types of analyses!

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  • Other PCs and OA equipment

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[Data] Degradation Analysis of Polycarbonate by Reaction Thermal Decomposition

For material evaluation and defect analysis! We will discuss the applied load and degradation mechanisms based on the differences in decomposition products.

Polycarbonate is a material that excels in impact resistance, weather resistance, and transparency, making it widely used in everything from industrial materials to everyday products. However, even polymers with excellent properties can undergo chemical changes, known as degradation, due to the usage environment and the passage of time. This document presents examples of degradation analysis of polycarbonate materials subjected to UV irradiation and constant temperature and humidity testing. [Contents] ■ Thermal decomposition GC-MS analysis of polycarbonate *For more details, please refer to the PDF document or feel free to contact us.

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Analysis of defects in overseas manufactured displays

Numerous achievements in defect analysis! Detailed analysis is possible, from confirming phenomena to inferring the mechanisms of defect occurrence.

Our company conducts "failure analysis of overseas manufactured displays." We can perform detailed analyses, from confirming phenomena to hypothesizing the failure mechanisms and narrowing down the production processes that caused the issues. We carry out lighting observations, panel disassembly, and optical microscope observations tailored to the failure symptoms. If it is necessary to narrow down the defective areas and conduct detailed analysis, we will propose appropriate methods. 【Examples of detailed analysis (partial)】 ■ Cross-sectional observation of wiring ■ Foreign matter analysis ■ Liquid crystal component analysis ■ Electrical characteristic measurement *Additional costs will be incurred. *For more details, please refer to the PDF document or feel free to contact us.

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Specification verification and failure analysis through reliability testing.

Analysis can be conducted on samples in various conditions thanks to our unique preprocessing technology!

Our company conducts consistent analysis from reliability testing to failure analysis. This allows us to confirm whether the samples meet the specifications, as well as to identify and observe the defective areas of failed samples. We propose and implement tests and analyses tailored to our customers' requests and objectives, assisting from cause investigation to problem resolution. Please feel free to contact us when you need our services. 【Analysis Flow】 ■ Specification confirmation of semiconductor devices through reliability testing ■ Identification of defective areas and observation of failure locations using TEM ・ Identification of defective areas through EMS/OBIRCH analysis ・ Observation of failure locations using TEM *For more details, please download the PDF or feel free to contact us.

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