Developed an 8M-bit product, which is the maximum memory capacity for non-volatile memory FeRAM.

Fujitsu Semiconductor Limited has developed the 8M-bit FeRAM "MB85R8M2T," which has the largest memory capacity in its FeRAM product lineup, and has started mass production this month. This product operates in a wide range of 1.8V to 3.6V and features a non-volatile memory with an SRAM-compatible parallel interface. It meets the demand for increased memory capacity beyond the previous maximum of 4M bits FRAM and addresses the requirement for reducing the battery used for power interruption measures in already deployed 8M-bit SRAM. By replacing the SRAM used in industrial applications such as control devices, robots, and machine tools with this FeRAM, it eliminates the need for batteries, reduces the mounting area of the memory section by approximately 90%, and contributes to overall cost reduction.

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