Observation of diffusion layers in semiconductors using FIB-SEM.

Shorter delivery time than his method! Both shape observation and diffusion layer observation can be performed using FIB-SEM!

Our company conducts "Observation of diffusion layers in semiconductors using FIB-SEM." By creating cross-sections using the FIB method and observing them with SEM, we visualized the diffusion layers of semiconductors and evaluated their shapes. In a case where the differences in built-in potential were visualized using the Inlens detector of the SEM, a difference in the energy of secondary electrons generated in N-type and P-type regions occurred due to the built-in potential. This difference in trajectories is detected by the SEM detector. 【Features】 ■ Both shape observation and diffusion layer observation can be performed using FIB-SEM. ■ Shorter delivery times compared to other methods. ■ Concentrations can be detected up to 10E16. ■ While the PN interface can be visualized, the concentration differences of N+/N- and P+/P- cannot be detected. *For more details, please refer to the PDF document or feel free to contact us.

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