Backside light emission analysis of SiC devices
Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!
Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.
- Company：アイテス
- Price：Other
