analysis(fem) - List of Manufacturers, Suppliers, Companies and Products

analysis Product List

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Structural analysis of prismatic Li-ion batteries.

Observation using optical microscopy and ultra-low acceleration FE-SEM! Detailed structural analysis and elemental analysis are possible.

By mechanically polishing commercially available rectangular Li-ion batteries and observing them with optical microscopy and ultra-low acceleration FE-SEM, detailed structural analysis and elemental analysis can be performed. The materials introduce the overall structure of the Li-ion battery and detailed structural observations of the Li-ion battery using SEM and ultra-low acceleration FE-SEM, accompanied by photographs. [Analysis Overview] ■ Overall structure of the Li-ion battery and SEM observation ■ Detailed structural observation of the Li-ion battery using ultra-low acceleration FE-SEM *For more details, please refer to the PDF materials or feel free to contact us.

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Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for Analysis - Backside Polishing - Supports various sample forms. Si chip size: 200um to 15mm square ■ Defective Area Identification - Backside IR-OBIRCH Analysis / Backside Emission Analysis - IR-OBIRCH Analysis: Supports up to 100mA/10V and 100uA/25V Emission Analysis: Supports up to 2kV * Covers a wide range of defect characteristics such as low-resistance shorts, micro-leaks, and high-voltage breakdown failures. ■ Pinpoint Cross-Section Observation of Leak Areas - SEM/TEM - Select SEM or TEM observation based on the predicted defects, allowing for pinpoint physical observation and elemental analysis of leak defect areas.

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Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

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Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.

  • Other analytical equipment

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