[Case Study] Plasma Analysis of "Particle-PLUS" Dual Frequency CCP

basic information

**Features** - The time scheme uses an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in devices such as magnetron sputtering systems, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*

Price range

Delivery Time

P4

Applications/Examples of results

【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to obtain high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage for efficient material sputtering 【Ion Implantation】 - Influence of the substrate on erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - Enables observation of physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power

Detailed information

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  This is a case study on plasma analysis of CCP (Capacitively Coupled Plasma) devices. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform high-speed simulations even in cases with multiple electrodes or when applying overlapping frequencies.

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  ◇Model Overview Conducted plasma analysis of 2-frequency CCP using an axisymmetric model.

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  Electric potential - Since the electron speed is considerably faster than the ion speed, ions are left behind in the plasma, resulting in a slight positive charge in the plasma. - Due to the self-bias effect, the electrodes are negatively charged. The high-frequency side has a self-bias of about -20 V, while the low-frequency side has a self-bias of about -150 V.

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  Transition of Particles - Change in particle number over time: It reaches a steady state in about 1×10^(−5) seconds, achieving a balance between the generation and annihilation of plasma particles. - Time variation of accumulated charge: It can be inferred that ions are left behind in the chamber, causing the plasma charge to be positively biased.

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  Particle number density Electron number density (periodic average) Ar ion number density (periodic average)

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  Ar ion flux Ar ion number flux (time-averaged) Ar ion energy flux (time-averaged) In Particle-PLUS, these flux distributions can be used to calculate the sputtering phenomenon.