Example: Particle-PLUS: GEC-CCP Device Plasma Analysis

basic information

**Features** - The time scheme uses the implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputter particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments, such as the flux distribution on opposing substrates, which can be evaluated in a short time. *For other functions and details, please feel free to contact us.*

Price range

Delivery Time

P4

Applications/Examples of results

【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to obtain high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying unreasonable voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and the damage to the chamber walls - By changing calculation conditions, optimization of high-density plasma generation at low power is possible

Detailed information

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  ◇Model Overview Ar Plasma Analysis of 3D (Three-Dimensional) GEC-CCP Device

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  Potential distribution and self-bias effect

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  Growth of Plasma Observed through Electron Density Distribution

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  Particle density distribution (steady state) - Electron density distribution (time-averaged) - Ar+ density distribution (time-averaged) It can be seen that there are more ions than electrons near the surface, indicating the formation of a sheath.

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  Reaction rate distribution - Ionization rate (period average) - Excitation rate (period average)

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  Temperature distribution - Electron temperature (periodic average) - Ar+ temperature (periodic average) In a particle model, it is possible to analyze the non-equilibrium temperature distribution of the plasma. (In a fluid model, it is difficult to accurately evaluate the temperature distribution of low-temperature plasma because it requires assuming a velocity distribution function.)

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  Energy distribution - Electron energy (period average) - Ar+ energy (period average)

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  - Magnitude of ion velocity (period average) - Joule heat (period average) Ions are strongly attracted by the self-bias of the power supply electrode. Additionally, Joule heat (the dot product of current density and electric field) increases in that area.