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SUN UP Diamond Bit for Pen Router 30PC No.130
Set of 30 high-quality advanced parts 【Features】 ■ Ideal for engraving, silver accessories, glass engraving, plastic models, and name engraving ■ Usable tools: electric mini router, battery-operated mini router, flexible shaft ■ Bit size: total length 45mm × shaft diameter 2.35mm Item number: 28303 *For more details, please feel free to contact us.
Low-power non-volatile memory that enables miniaturization and thinness of wearable devices.
The MB85RS1MT is a compact size of 3.09 x 2.28 x 0.33mm. When comparing the implementation area of both, the WL-CSP corresponds to about 23% of the SOP, allowing for a reduction of approximately 77% in implementation area. Furthermore, this compact package achieves a thickness of 0.33mm, which is about half that of a credit card, enabling a reduction of about 95% in volume compared to SOP. By introducing this FeRAM into wearable devices that frequently log real-time data, it becomes possible to extend or miniaturize battery life. ■ Main Specifications - Product Name: MB85RS1MT - Memory Capacity (Configuration): 1M bits (128K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Supply Voltage: 1.8V to 3.6V - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (at +85°C) - Package: 8-pin WL-CSP, 8-pin SOP
Non-volatile memory that can replace SRAM, enabling battery-less solutions for industrial machinery and business equipment.
This product is a non-volatile memory that retains data even when the power is turned off. It is offered in a 44-pin TSOP package compatible with general-purpose SRAM, allowing for the replacement of SRAM with this FeRAM in industrial machinery, business equipment, and medical devices without significantly altering the design of the circuit board. This eliminates the need for a battery for data retention, contributing to a reduction in the mounting area of the final product's circuit board, power savings, and overall cost reduction. ■ Main Specifications - Capacity (Configuration): 4M bits (256K x 16 bits) - Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Data Retention Characteristics: 10 years (+85℃) - Access Time Address Access Time: 150ns (Min) /CE Access Time: 75ns (Max) - Operating Current Operating Supply Current: 20mA (Max) Standby Current: 150µA (Max) Sleep Current: 20µA (Max) - Package: 44-pin TSOP
High-speed non-volatile memory 4M-bit FeRAM "MB85RQ4ML" that contributes to the performance improvement of network devices.
This product operates on a single power supply of 1.8V and features a quad SPI interface with four input/output pins, achieving a data transfer speed of 54MB per second. This high-speed operation and the characteristics of non-volatile memory make it ideal for use in networking, RAID controllers, and industrial computing. ■ Main Specifications - Product Name: MB85RQ4ML - Memory Capacity (Configuration): 4M bits (512K x 8 bits) - Interface: SPI / Quad SPI - Operating Power Supply Voltage: 1.7V to 1.95V (single supply) - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 16-pin SOP
4M-bit FeRAM "MB85RS4MT" suitable for real-time data rewriting such as location information from a drive recorder.
This product is a memory developed in response to customer demands for "increased rewrite cycles," "shorter rewrite times," and "increased memory capacity" due to changes in the environment, such as the expansion of edge computing and the increase in the amount of sensor data. It is suitable for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices. ■ Main Specifications - Product Name: MB85RS4MT - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 40MHz - Operating Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles - Package: 8-pin SOP
Non-volatile memory suitable for advanced automotive markets such as ADAS.
The MB85RS2MLY guarantees 10 trillion data rewrites in a temperature range of -40℃ to +125℃. This characteristic makes it suitable for applications that require real-time data recording. For example, it is possible to record data every 0.1 seconds for 10 years (over 3 billion times). Additionally, the reliability testing of this product complies with AEC-Q100 Grade 1, a high-quality standard known as automotive grade. Therefore, from both the perspective of data write cycles and reliability, this product is well-suited for applications that continuously detect and record vehicle conditions, such as ADAS. ■ Main Specifications - Product Name: MB85RS2MLY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.7V to 1.95V - Operating Temperature Range: -40℃ to +125℃ - Guaranteed Write/Read Cycles: 10 trillion (10^13) - Package: 8-pin SOP, 8-pin DFN - Quality Standard: AEC-Q100 Grade 1 compliant
1M-bit FeRAM 'MB85RC1MT' is optimal as memory for FA control devices, measurement meters, and industrial machinery.
The "MB85RC1MT," our largest 1M-bit FeRAM with an I2C interface, guarantees 10 trillion write cycles, making it an ideal product for FA control devices, measurement meters, and industrial machinery that require frequent rewrites, such as real-time logging. We offer a wide range of FeRAM products with both I2C and SPI serial interfaces, enabling us to provide the optimal non-volatile memory solutions to meet our customers' needs. ■ Features This product is the I2C interface 1M-bit (128K words x 8 bits) FeRAM "MB85RC1MT." It operates at a low voltage of 1.8V to 3.3V within a temperature range of -40°C to +85°C. In addition to a standard operating frequency of 1MHz, comparable to EEPROM, it supports a high-speed mode for reading and writing at 3.4MHz. With a rewrite guarantee of 10 trillion cycles, which far exceeds that of general-purpose EEPROM, it strongly supports frequent data rewrites, such as real-time logging, even in I2C products.
