analysis(se) - List of Manufacturers, Suppliers, Companies and Products

analysis Product List

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Structural analysis of prismatic Li-ion batteries.

Structural analysis of prismatic Li-ion batteries.

Observation using optical microscopy and ultra-low acceleration FE-SEM! Detailed structural analysis and elemental analysis are possible.

By mechanically polishing commercially available rectangular Li-ion batteries and observing them with optical microscopy and ultra-low acceleration FE-SEM, detailed structural analysis and elemental analysis can be performed. The materials introduce the overall structure of the Li-ion battery and detailed structural observations of the Li-ion battery using SEM and ultra-low acceleration FE-SEM, accompanied by photographs. [Analysis Overview] ■ Overall structure of the Li-ion battery and SEM observation ■ Detailed structural observation of the Li-ion battery using ultra-low acceleration FE-SEM *For more details, please refer to the PDF materials or feel free to contact us.

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Analysis of the assembly joint of the component.

Analysis of the assembly joint of the component.

By applying chemical etching, ion milling, and FIB processing to mechanical polishing methods, we will analyze various metal joints, starting with lead-free solder.

The joints of electronic components have a significant impact on the overall reliability of the circuit board. Particularly at solder joints, not only the shape but also the observation of the metal structure becomes important.

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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for Analysis - Backside Polishing - Supports various sample forms. Si chip size: 200um to 15mm square ■ Defective Area Identification - Backside IR-OBIRCH Analysis / Backside Emission Analysis - IR-OBIRCH Analysis: Supports up to 100mA/10V and 100uA/25V Emission Analysis: Supports up to 2kV * Covers a wide range of defect characteristics such as low-resistance shorts, micro-leaks, and high-voltage breakdown failures. ■ Pinpoint Cross-Section Observation of Leak Areas - SEM/TEM - Select SEM or TEM observation based on the predicted defects, allowing for pinpoint physical observation and elemental analysis of leak defect areas.

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

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Narrowing down defective areas using the EBAC (Absorption Current) method.

Narrowing down defective areas using the EBAC (Absorption Current) method.

"SEM images" and "absorption current images (current sensing)" etc.! It identifies open defects in wiring and areas with high resistance defects.

Our company provides analysis and reliability evaluation services. In the "Narrowing Down Defective Areas Using the EBAC (Absorbed Current) Method," we identify open defects and high-resistance areas in wiring using the EBAC method with a nano-probe and high-sensitivity amplifier. By sensing the absorbed current as voltage, we can obtain a contrast based on the resistance voltage drop within the wiring, allowing us to detect high-resistance defects in TEGs such as via chains. [Analysis Examples Using the EBAC Method] ■ SEM Images ■ Overlaid Images ■ Absorbed Current Images (Current Sensing) ■ Absorbed Current Images (Voltage Sensing) *For more details, please refer to the PDF document or feel free to contact us.

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Analysis of defects in overseas manufactured displays

Analysis of defects in overseas manufactured displays

Numerous achievements in defect analysis! Detailed analysis is possible, from confirming phenomena to inferring the mechanisms of defect occurrence.

Our company conducts "failure analysis of overseas manufactured displays." We can perform detailed analyses, from confirming phenomena to hypothesizing the failure mechanisms and narrowing down the production processes that caused the issues. We carry out lighting observations, panel disassembly, and optical microscope observations tailored to the failure symptoms. If it is necessary to narrow down the defective areas and conduct detailed analysis, we will propose appropriate methods. 【Examples of detailed analysis (partial)】 ■ Cross-sectional observation of wiring ■ Foreign matter analysis ■ Liquid crystal component analysis ■ Electrical characteristic measurement *Additional costs will be incurred. *For more details, please refer to the PDF document or feel free to contact us.

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Analysis of good LCD panels

Analysis of good LCD panels

Check the quality status of LCD components and products! We will analyze the structures of the LCD panel using our analytical methods and expertise!

At AITES, we conduct quality analysis of LCD components/products, confirming the quality status of products based on our expertise in LCD technology. The target panels include SEG-LCD, AM-LCD (a-Si TFT / LTPS TFT), OLED for automotive, monitors, mobile devices, and more. We perform quality analysis using our analytical methods on the various structures of liquid crystal panels. 【Analysis Details (Excerpt)】 <Reliability/Lighting Tests> ■ Classification - Reliability Testing - Lighting Inspection ■ Analytical Methods - Oven Drive Testing - Visual Inspection *For more details, please refer to the PDF document or feel free to contact us.

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis for the faulty area!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu Office in 1993, we have cultivated our own unique analysis and analytical techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 - OBIRCH analysis supports not only Si but also SiC and GaN devices. - FIB processing is possible from either side. - Visualization of the depletion layer formed at the PN junction. - Elemental analysis such as EDS and EELS is also supported. *For more details, please refer to the PDF document or feel free to contact us.

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Analysis of Li-ion battery separators

Analysis of Li-ion battery separators

I confirmed the blocking function of polymer melting at high temperatures!

We conducted material analysis of the separator used in commercially available Li-ion batteries using FT-IR analysis, and confirmed its function of blocking polymer melting at high temperatures. The document presents the material analysis of Li-ion battery separators and observations of changes in the separator's condition under high-temperature environments, using graphs and photographs. [Analysis Overview] ■ Material analysis of Li-ion battery separators ■ Observation of changes in the condition of the separator under high-temperature environments - The condition changes of the separator were observed over time at a constant temperature of 135°C using FIB/SEM. *For more details, please refer to the PDF document or feel free to contact us.

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Failure analysis of IC (integrated circuit)

Failure analysis of IC (integrated circuit)

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for different failure modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, starting with "Luminescence Analysis/OBIRCH Analysis," which allows for layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Luminescence Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Micro Probe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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Failure analysis of electrostatic discharge damaged orange LED.

Failure analysis of electrostatic discharge damaged orange LED.

We will introduce a comparison of the brightness and characteristics of good products and electrostatic discharge (ESD) damaged products, along with examples of luminescence analysis using EMS microscopy!

We conduct failure analysis of orange LEDs that have been damaged by electrostatic discharge (ESD). LEDs that have been destroyed during ESD testing and show a decrease in luminous intensity can be analyzed using emission photometry and the IR-OBIRCH method, allowing us to clarify the failure phenomena. We have examples such as "Comparison of brightness and characteristics between good products and ESD-damaged products" and "Emission analysis using an emission microscope." [Analysis Examples] ■ Comparison of brightness and characteristics between good products and ESD-damaged products - By polishing the lens part of a bullet-type LED to flatten it, a brightness comparison was conducted, revealing dark areas. ■ Emission analysis using an emission microscope - In the ESD-damaged products, dark areas were observed under forward bias, while only the damaged areas emitted light under reverse bias. ■ IR-OBIRCH and SEI analysis - Detailed damage locations were identified through IR-OBIRCH analysis of ESD-damaged products. *For more details, please refer to the PDF document or feel free to contact us.

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