Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!
In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a non-destructive method that visualizes the shape of materials in three dimensions and allows for quantitative evaluation. In the PDF document, you can view the CT images obtained when observing the etch pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etch pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and analytical techniques along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, LCDs, metals, and new materials. Please feel free to contact us if you have any requests.