Tohoku University Technology: Co-based magnetic alloy for high TMR element: T19-018
TMR ratio over 200% with no B addition, low temperature heat treatment and sputtered film formation
TMR element showing the tunnel magnetoresistance (TMR) effect, has been applied to products such as magnetic sensor, non-volatile memory, etc. The TMR ratio, which represents the variation ratio of element resistance, is one of the element performance indicator and it is an important characteristic that influences the specification of the applied product. TMR element using amorphous FeCoB magnetic alloy and MgO tunnel barrier is currently the main material and can be fabricated by sputtering method which is suitable for mass production. This is an excellent material which becomes FeCo/MgO crystal when B is diffused by heat-treating the element and shows 200-600% TMR ratio. However, heat treatment with B diffusion could be a factor in reducing the functionality of other layers adjacent to FeCo. This invention provides a technology for Co-based magnetic irregular alloy showing TMR ratio comparable to FeCoB by low temperature heat treatment, even without the addition of B.
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The revenue generated from technology transfer is reinvested into universities and researchers as new research funding, which is used to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will actively promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by concluding basic technology transfer agreements with the following universities (as of June 1, 2025): - Tohoku University - Hirosaki University - Iwate University - Akita University - Fukushima University - Yamagata University - Tohoku Gakuin University - Iwate Medical University - Fukushima Medical University - Aizu University - Miyagi University - Hokkaido University - Muroran Institute of Technology - Showa Medical University
