Reverse bias test of power devices (up to 2000V)

It is possible to set the failure criteria (current value)! Evaluate device degradation and characteristics through high temperature and high voltage power supply.

At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to 2000V. By monitoring the leakage current during the test, the degradation status of the device can be grasped in real-time. Since the power supply is independent, even if one device fails during the test, it does not affect the other devices. Additionally, it is possible to set a failure criterion (current value) and to cut off the power supply to the device deemed faulty at the time of failure judgment. 【Features】 ■ Real-time monitoring of the leakage current during the test allows for understanding the degradation status of the device. ■ The independent power supply ensures that the failure of one device during the test does not affect other devices. ■ The power supply to the device deemed faulty can be cut off at the time of failure judgment. *For more details, please refer to the PDF document or feel free to contact us.

Other measuring instruments