Introduction to Particle-PLUS Analysis Case: "RF Magnetron Sputtering Analysis" Simulation Case
This is an analysis case of RF magnetron sputtering, which is one of the film deposition methods using process plasma. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform simulations of deposition rates and other parameters at high speed. ◇ Features of 'Particle-PLUS' - Excels in low-pressure plasma analysis. - By combining axisymmetric models with mirror-symmetric boundary conditions, it can obtain results quickly without the need for full device simulations. - Specializes in plasma simulations for low-pressure gases, where fluid modeling is difficult. - Supports 2D (two-dimensional) and 3D (three-dimensional) analyses, allowing efficient analysis even for complex models. - As a strength of our in-house developed software, customization to fit customer devices is also possible. ◆ Various calculation results can be output ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the wall - Energy spectrum of electrons and ions at the wall - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *Please feel free to contact us for more details.
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basic information
**Features** - The time scheme uses the implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the above plasma module, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module analyzes the behavior of atoms sputtered from the target in plasma and neutral gas environments, such as the flux distribution on opposing substrates, which can be evaluated in a short time. *For other functions and details, please feel free to contact us.*
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Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using an external circuit model - It is possible to apply voltages to the electrode plates that align with actual devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - Enables observation of physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power
Detailed information
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Introduction to Particle-PLUS Analysis Examples RF Magnetron Sputtering (Left: Ionization Generation Distribution / Right: Electron Density Distribution)
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◇Model Overview Case study of Ti target sputtering analysis using Ar plasma in an axisymmetric model.
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Magnetic field and gas density - Magnetic flux density - Ar gas density
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Electric potential and electric field - Electric potential - Electric field Since the speed of electrons is considerably faster than that of ions, ions are left behind in the plasma, resulting in a slightly positive electric potential in the plasma.
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Number of particles and power consumption - Time evolution of the number of particles - Power consumption (DC component) It can be seen that after approximately 5×10^(−5) seconds, the physical quantities change very little and reach a steady state.
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Plasma density - Electron number density - Ar ion number density Compared to direct current discharge, alternating current discharge results in a broader electron distribution (with a wider tail). This trend can also be reproduced in simulations.
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Plasma temperature - Electron temperature (time-averaged) - Ar+ temperature (time-averaged) Similar to particle number density, particle temperature also becomes broader (with a wider tail) in AC discharge. This trend can also be reproduced in simulations.
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Ion flow rate - Ar ion number flux - Ar ion energy flux
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Sputtering and film formation - Ti erosion rate (target) - Ti deposition rate (substrate/wall)
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Our company develops and sells a "Maintenance Management System" for managing and operating various plants, factories, and other facilities and assets. Currently, this system is undergoing significant evolution into a system that incorporates IoT technologies, such as sensor information and input from tablet devices, as well as AI technologies like machine learning, featuring functions for failure prediction and automatic scheduling. Additionally, as part of the recent trend of digital transformation (DX), there is a growing movement to digitize and automate manufacturing processes and research and development sites in factories to improve operational efficiency. In line with this trend, our company provides a solution aimed at enhancing efficiency in research and development environments, which is the Laboratory Information Management System (LIMS). This software includes features such as workflow management, data tracking, data management, data analysis, and integration of electronic lab notebooks.