Simulation of atomic behavior within a magnetron sputtering device using the particle-based plasma analysis software Particle-PLUS.
Particle-PLUS is an excellent simulation software for numerical analysis of non-equilibrium plasma generated in rarefied gases. It can be utilized in applications such as magnetron sputtering, PVD, plasma CVD, capacitively coupled plasma (CCP), and dielectric barrier discharge (DBD). By utilizing the sputter particle module among various modules (refer to the product descriptions below), it is possible to determine the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, allowing for quick evaluation of flux distribution on opposing substrates. The analysis procedure involves using the particle and energy flux of the plasma obtained from the plasma module to determine the generation distribution and amount of sputter particles, and tracking their motion using a particle method known as the test particle method.
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basic information
Particle-PLUS consists of several key modules. ■ Plasma Module It analyzes the behavior of electrons and ions using the Particle In Cell method (PIC). The solver features an implicit time scheme, allowing for stable time evolution over a large computation time width Δt compared to conventional methods. Additionally, it employs the Monte-Carlo Scattering method for collision reaction models between neutral gas and electrons and ions, enabling accurate and rapid calculations of complex reaction processes, which are crucial in process plasma simulations. ■ Neutral Gas Module This module determines the initial neutral gas distribution used in the plasma module, allowing for the evaluation of gas flow in a short time using the DSMC method. ■ Sputtered Particle Module This module calculates the behavior of atoms sputtered from a target in devices such as magnetron sputtering systems, enabling quick evaluation of flux distributions on opposing substrates. Furthermore, Particle-PLUS supports parallel computing, allowing for rapid results.
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P5
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Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be smooth and relatively realistic for simulation - Calculations are relatively stable to avoid applying unreasonable voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for the optimization of high-density plasma generation at low power
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