HAST test of power devices

At Aites Co., Ltd., high-temperature reverse bias testing (HTRB) for evaluating the oxide film and junction of power devices can be applied up to 2000V. By monitoring the leakage current during the test, the degradation status of the device can be understood in real-time. Since the power supply is independent, if one device fails during the test, it does not affect the other devices. Additionally, it is possible to set a defect criterion (current value) and cut off the power supply to the defective device when a defect is determined. 【Specifications and Service Details】 ■ Test Voltage: Up to DC 2000V ■ Applied Current: Up to 14mA ■ Number of Test Devices: Up to 8 (independent power supply) ■ Compatible Modules: TO-247, TO-220, etc. (other packages require consultation regarding connection methods) ■ Measurement Content: Monitoring of leakage current ■ Temperature Range: Up to 200°C (85°C/85% in high temperature and high humidity conditions)