"Particle-PLUS" is a plasma and rarefied fluid analysis software that uses the particle method.
"Particle-PLUS" is a simulation software suitable for research, development, and manufacturing of devices and materials using plasma. - It specializes in low-pressure plasma analysis. - It can perform advanced physical model analysis such as CCP and external circuit models. - It excels in plasma simulation for low-pressure gases, where calculations with fluid models are challenging. - It supports 2D (two-dimensional) and 3D (three-dimensional) analyses, allowing efficient analysis even for complex models. - As a strength of our in-house developed software, it can perform CCP and magnetron sputtering calculations with standard features, and customization to fit customer devices is also possible. ◆ Supports various cases ◆ - Magnetron sputtering - PVD, plasma CVD - Capacitively coupled plasma (CCP) - Dielectric barrier discharge (DBD) - Electrophoresis, etc. ◆ Outputs various calculation results ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the walls - Energy spectrum of electrons and ions at the walls - Density distribution/temperature distribution/velocity distribution of neutral gas, etc. *For more details, please feel free to contact us.
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basic information
【Features】 ● The time scheme uses an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. ● The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. ● The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. ● The sputter particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.
Price range
P5
Delivery Time
P4
Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to the chamber walls - Optimization of power using an external circuit model - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be smooth and relatively realistic for simulation - Calculations are relatively stable to avoid applying unreasonable voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The effect of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power
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