Hot Stage [Substrate Heating Mechanism] Ultra-High Temperature Substrate Heating Stage Max 1800℃_Φ2 to Φ6 inch

High-temperature substrate heating mechanism for vacuum thin film processes, used for the development of semiconductors, electronic devices, etc. It can be utilized for various film deposition experiments on silicon substrates, sapphire substrates, compound substrates, and others. Selection of elements and materials according to ultra-high temperature substrate heating conditions up to 1800°C for vacuum equipment such as CVD and sputtering is possible.
◉ Compatible with ultra-high vacuum, inert gas, O2, and various process gas atmospheres.
◉ Substrate up/down/rotation mechanism and RF/DC bias application possible.
◉ Selection of elements according to the atmosphere:
NiCr,
Inconel,
Tungsten,
Graphite,
CC composite,
Graphite (SiC coating, PBN coating)
CC composite (PG coating)
◉ Various vacuum flange connections: ICF, VF
◉ Thermocouple included
◉ Other options: Motor controller, temperature control unit, transbox.


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Heating, substrate vertical movement, substrate rotation, RF/DC substrate bias