テルモセラ・ジャパン List of News Articles

Two thin film experimental devices are connected via a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected through the load lock. Thanks to Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB Evaporation: 7cc crucible x 6 - Resistance Heating Evaporation x 2 - Organic Evaporation Limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron Cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique 'soft etching' technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)

4 cathodes with Φ2 inch mounted Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 systems of MFC (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., are also possible.

Dear Customers, We will soon be updating our high-temperature experimental furnace to one that offers even higher functionality and superior operability compared to our conventional products. By the end of September this year, we expect to completely revamp our product lineup and introduce new equipment information. Based on the minimum configuration "Mini-BENCH" for universities and research institutions, we will enhance the basic functions and add various optional features. *Main Improvements - Redesign of the benchtop frame - Clamshell-type chamber (damper or linear drive) - Plug-and-play design for easy replacement, maintenance, and expansion of pumps, gauges, etc. - APC process pressure control (automatic pressure adjustment via PID loop: upstream or downstream control) - Integration of the TE series and MiniLab-CF into "Mini-BENCH-prism" and "MiniLab-WCF" This will not only cater to research and development but also comply with stringent safety standards for prototyping and small-scale production in factories and development sites. Please wait a little longer for the update. In the meantime, we will continue to list our current products, but if you have any requests, we will respond accordingly, so please feel free to consult with us first.

Compact, space-saving, and energy-efficient! High-performance ultra-high-temperature experimental furnace for R&D. A compact experimental furnace capable of heating small samples up to 2900°C for R&D purposes. It can conduct various firing experiments such as ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power supply specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others

This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into limited laboratory space with a compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, can be utilized for multilayer films and simultaneous deposition among other purposes. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. Utilizes low-temperature organic deposition sources with excellent temperature responsiveness/stability and deposition sources for metal films. PLC automatic control with easy touch panel operation, centralized management of various settings. An intuitive HMI that allows anyone to operate without complicated procedures. Connects to a PC via USB cable, logs and saves CSV files, and creates, registers, and saves film formation recipes. ◉ Compact size: 804(W) x 530(D) x 600(H)mm ◉ Weight: 40kg to 70kg (depending on equipment configuration) ◉ Excellent basic performance - Achievable vacuum level 5x10-5 Pascal - Equipped with high-performance turbo molecular pump - Φ2 inch or Φ4 inch substrates ◉ Deposition sources - Resistance heating deposition source TE x up to 2 units - Organic deposition source LTE x up to 4 units (if mixed with resistance heating TE, up to 2 units) ◉ 7" touch panel ◉ Continuous film formation - Automatic control of film formation programs - Registration of 30 types of recipes - High-precision wide-range vacuum gauge ◉ Abundant options - Substrate rotation - Up and down movement with 300mm stroke - Substrate shutter - Dry pump (RP standard)

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples in the laboratory and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

Tabletop Compact Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for empty furnace only) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and others