Failure analysis of power devices
We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.
We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for Analysis - Backside Polishing - Supports various sample forms. Si chip size: 200um to 15mm square ■ Defective Area Identification - Backside IR-OBIRCH Analysis / Backside Emission Analysis - IR-OBIRCH Analysis: Supports up to 100mA/10V and 100uA/25V Emission Analysis: Supports up to 2kV * Covers a wide range of defect characteristics such as low-resistance shorts, micro-leaks, and high-voltage breakdown failures. ■ Pinpoint Cross-Section Observation of Leak Areas - SEM/TEM - Select SEM or TEM observation based on the predicted defects, allowing for pinpoint physical observation and elemental analysis of leak defect areas.
- Company：アイテス
- Price：Other
