Real-time radiation sensing achieved with thin-film wide-bandgap semiconductors.
It is a technology that enables the nanoparticle formation of the wide bandgap semiconductor ZnGa2O4 and the fabrication of thin films. Due to its transparency and flexibility, it has high applicability for devices, and its ability to detect wavelengths from short-wave ultraviolet to X-rays allows for real-time radiation sensing applications. Features: - High transparency and excellent compatibility with existing optical systems - Capable of forming films on simple, inexpensive, safe, large-area, and flexible substrates - Achieves fast response by directly converting X-rays into electrical signals
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basic information
ZnGa2O4 is a wide bandgap semiconductor (Eg=4.8~5.2 eV) that is chemically, thermally, and mechanically stable, and has high radiation resistance. It can detect wavelengths from short-wave ultraviolet to X-rays using a single material. A method for synthesizing nanoparticles using hydrothermal synthesis has already been established. *By clicking on "Related Links," you can view detailed information about the technology. A free download of the technology catalog is also available on the linked page. For inquiries regarding the details of the technology or requests for product development in collaboration with university technologies, please feel free to contact us via "Contact Us from the Web."
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【Verification Experiment 1】 A voltage of 1V was applied between the electrodes of the X-ray detection element, and X-rays were intermittently irradiated from a low dose rate to verify the responsiveness. ⇒ Confirmed the level of responsiveness and conversion formula necessary for real-time X-ray imaging. 【Verification Experiment 2】 X-rays were irradiated and detected in a part of the X-ray detection material consisting of 9 sections, under the condition of being shielded with a lead plate. ⇒ Based on the dose rate calculated from the conversion formula, the spatial distribution could be visualized as a heat map.
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