It is a suitable radical source for power devices and LEDs.
Our company offers a "high-density radical source device" that supplies high-density N radicals, improving the film deposition rate of MBE compared to conventional radical sources. Designed to prevent the generation of impurities, it enables faster growth while maintaining high-quality crystal growth of GaN. It can also generate O radicals, allowing for expansion into oxides. Additionally, we have a variety of products including radical monitors, compact VUV spectrometers, and CCP-type plasma etching devices. 【Features】 ■ Ion removal and electron removal mechanisms included ■ High-density radical generation of H, N, and O ■ ICF114 flange mounting ■ External control function for gas supply ■ Orifice for adjusting process chamber pressure *For more details, please download the PDF or feel free to contact us.
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basic information
【Composition】 ■ Atomic radical generation source ■ Head-integrated matching box ■ Gas supply device ■ Feedback control (optional) *For more details, please download the PDF or feel free to contact us.
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Our company primarily deals with devices that utilize plasma technology. In particular, atmospheric pressure plasma is a technology used for surface treatment and modification of metals and resins, promoting growth in agriculture, and sterilization and disinfection of medical instruments. We aim to leverage this technology to collaboratively create various products with other companies and contribute to society in any way we can. Please feel free to contact us if you have any inquiries.
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