Improve performance with high-speed reading, programming, and erasure times!
We would like to introduce our "4Mb, 16Mb 3V Multi-I/O NOR Flash Memory." The "4Mb AS25F304MD-10S1IN" and "16Mb AS25F316MQ-10S1IN" combine high-speed read performance of up to 104MHz with fast program and erase times of 1.1ms and 2.6ms, respectively. The maximum erase/program current is up to 1.3mA. The maximum read current is up to 3.7mA at 104MHz, designed to meet the demands of the computer, consumer, communication, and IoT markets. 【Advantages (partial)】 ■ Operates in Single, Dual, and Quad (AS25F316MQ-10S1IN) SPI modes ■ Reliable long-term performance with 100,000 program/erase cycles and 20 years of data retention ■ Uniform 4KB, 32KB, or 64KB erase ■ Pause and resume for program/erase *You can download the English version of the catalog. For more details, please feel free to contact us.
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【Other Advantages】 ■ 8/16/32/64 byte trap-around burst read mode (AS25F316MQ-10S1IN) ■ Advanced security features ■ Block protection ■ Unique 128-bit ID for each device ■ Detectable parameters (SFDP) register ■ 4K-bit secure OTP * You can download the English version of the catalog. For more details, please feel free to contact us.
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You can download the English version of the catalog. For more details, please feel free to contact us.
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Founded in 1991 as a general trading company for electronic components, we have consistently pursued "creativity" as our policy since then. Our company demonstrates "creativity" by exploring and proposing a wide range of products from various fields, without being constrained by the categories of items we handle, and by standing in the customer's perspective to meet any demands. Additionally, we provide cutting-edge technical information focused on semiconductors and electronic components, aiming to establish a global distribution network.
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