Introduction to Particle-PLUS Analysis Case: "Plasma Sputtering of a Cylindrical Magnetron Device" Simulation Case
This is an analysis case of magnetron sputtering using a cylindrical target, which is one method for forming a strong film on the inside of a long cylindrical pipe. By combining the axisymmetric model and mirror symmetry boundary conditions available in Particle-PLUS, it is possible to obtain results quickly without the need for a full simulation of the entire device. ◇ Features of 'Particle-PLUS' - It excels in low-pressure plasma analysis. - By combining the axisymmetric model and mirror symmetry boundary conditions, results can be obtained quickly without the need for a full simulation of the entire device. - It specializes in plasma simulations in low-pressure gases, where calculations using fluid models are difficult. - It supports both 2D (two-dimensional) and 3D (three-dimensional) analyses, allowing for efficient analysis of complex models. - Customization is possible as a strength of our in-house developed software. ◆ Various calculation results can be output ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the wall - Energy spectrum of electrons and ions at the wall - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *Please feel free to contact us for more details.
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basic information
**Features** - The time scheme uses an implicit method, allowing for stable time evolution to be calculated over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
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Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be smooth and simulated with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and the damage to the chamber walls - It is possible to optimize the generation of high-density plasma at low power by changing calculation conditions
Detailed information
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Introduction to Particle-PLUS Analysis Case Study: Plasma Sputtering of Cylindrical Magnetron Device
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◇Model Overview Analysis case of an axisymmetric model for plasma sputtering in a cylindrical magnetron device.
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Static magnetic field
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Plasma density - Electron number density - Ion number density
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Electric potential and electric field
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Sputtering - Energy flux of incident ions on the target surface - Ti erosion rate of the target surface
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Film formation - Number density of sputtered particles - Energy histogram of sputtered particles that reached the substrate - Ti deposition rate on the substrate surface
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