Simple measurement of band gap using XPS

It is possible to make simple measurements using XPS! Please inquire about semiconductors other than oxide-based ones.

At AITES, we conduct "Simple Measurement of Band Gap Using XPS." It is possible to simply measure the band gaps of materials and thin films with relatively wide band gaps among semiconductors and insulators using XPS. When measuring the band gap of β-Ga2O3 using the O1s peak, the band gap of β-Ga2O3 was measured to be approximately 4.9 eV, based on the difference between the O1s peak position and the energy loss edge due to the band gap. 【Features】 ■ Simple measurement can be performed using XPS ■ Simple measurement of thin films with wide band gaps, such as SiON, is also possible ■ Compatible with semiconductors other than oxide-based materials *For more details, please refer to the PDF materials or feel free to contact us.

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