A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.
ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light across a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.
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**Features** - Ideal light response over a wide wavelength range (200 nm to 950 nm) - Over 96% external quantum efficiency - Capable of collecting light at incident angles of up to 70 degrees **Technical Information** - Ultraviolet light response characteristics (twice that of a typical pn junction photodiode) - Detection angle (extremely high absorption rate of >95% at 60°C) - External certification Physikalisch-Technische Bundesanstalt (German National Metrology Institute) MIKES (Finnish National Metrology Institute)
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- Ultra-sensitive photodiode for wearable health monitoring devices - Light detection (illuminance sensor) - X-ray imaging - Spectral analysis
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KLRB has been uncovering cutting-edge optical components from around the world and supporting the development of various optical technologies, particularly in the fields of medical, environmental, and analytical applications. With the theme "SOLUTION FOR OPTICAL SYSTEM DEMANDS," we are actively building and expanding our optical solution business. We aim to respond to our customers' increasingly sophisticated and diverse needs more swiftly and accurately than anyone else, becoming a company that contributes to both business and society. As a "specialized trading company proposing the utilization of optical energy," we invite you to look forward to our unique and promising optical solutions that will pave the way for a new era of light.
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