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  6. EBSD analysis

EBSD analysis

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last updated:Jul 31, 2020

アイテス
アイテス
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Changes in crystal orientation and crystal grain size can be analyzed! We introduce the EBSD (Electron Backscatter Diffraction) method.

The EBSD method is a technique for analyzing the distribution of crystal grains, microstructure, and crystal phase distribution by calculating the crystal orientation of patterns continuously captured based on the information of the crystal structure of the sample. Materials such as metals and ceramics, which are crystalline, are thought to be composed of numerous crystal lattices like cubes, and this analysis method examines the orientation of these lattices (crystal orientation). Various maps are used, including the IQ map (Image Quality Map), IPF map, GROD map, and pole figures. 【Features】 ■ The EBSD method is a technique for analyzing the distribution of crystal grains, microstructure, and crystal phase distribution. ■ Uses the TSL Solutions OIM7.0 crystal orientation analysis device. ■ Analyzes the orientation of the crystal lattice (crystal orientation). ■ Changes in crystal orientation and grain size due to different processing conditions (such as rolling and extrusion) can be analyzed. *For more details, please refer to the PDF document or feel free to contact us.

    Electrical Equipment TestingOther analytical equipment
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EBSD analysis

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【Map Examples】 ■ IQ Map (Image Quality Map) ■ IPF Map (Inverse Pole Figure Map) ■ Crystal Direction Map ■ GROD Map ■ Pole Figure ■ Inverse Pole Figure *For more details, please refer to the PDF document or feel free to contact us.

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Total support service for cross-section grinding, processing, observation, and analysis.

Total support service for cross-section grinding, processing, observation, and analysis.

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Regarding the bonding interface of Cu wire bonding.

Regarding the bonding interface of Cu wire bonding.

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[Data] On the bonding interface of Cu wire bonding

[Data] On the bonding interface of Cu wire bonding

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EBSD analysis

EBSD analysis

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Crystal analysis of Cu using the EBSD method.

Crystal analysis of Cu using the EBSD method.

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Example of analysis using the EBSD method

Example of analysis using the EBSD method

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[Example of Analysis by EBSD] Screw

[Example of Analysis by EBSD] Screw

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Crystal analysis by EBSD BGA

Crystal analysis by EBSD BGA

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[Analysis Example Using EBSD] Steel Plate

[Analysis Example Using EBSD] Steel Plate

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Crystal analysis by EBSD: Intermetallic compounds in solder joints.

Crystal analysis by EBSD: Intermetallic compounds in solder joints.

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[Example of analysis using EBSD] Pipe

[Example of analysis using EBSD] Pipe

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[Example of analysis using EBSD] Via

[Example of analysis using EBSD] Via

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[Example of analysis using EBSD] High melting point solder

[Example of analysis using EBSD] High melting point solder

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[Analysis Example by EBSD] Chip

[Analysis Example by EBSD] Chip

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[Data] Whisker Analysis using EBSD

[Data] Whisker Analysis using EBSD

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Crystal analysis by EBSD: Aluminum weld joint (spot welding)

Crystal analysis by EBSD: Aluminum weld joint (spot welding)

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[Example of analysis using EBSD] Silicon wafer

[Example of analysis using EBSD] Silicon wafer

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[Case of EBSD] Comparison of two brass materials

[Case of EBSD] Comparison of two brass materials

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Example of analysis of compounds at the SAC solder and Ni pad interface.

Example of analysis of compounds at the SAC solder and Ni pad interface.

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Observation of ceramic substrates

Observation of ceramic substrates

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Example of analysis of compounds at the interface between SAC solder and Ni pads.

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We will introduce an example of the analysis of compounds formed at the interface between Sn-Ag-Cu solder and NiP pads. At the interface between the NiP pad and Sn-Ag-Cu solder, compounds such as (Ni,Cu)3Sn4 and (Cu,Ni)6Sn5 grow, and surface analysis using EDX reveals the distribution of Ni, Cu, and Sn within these compounds. The EBSD method is an analytical technique based on the crystallographic information of the sample. By combining it with elemental analysis using EDX, it is possible to estimate the composition, and in some cases, it may be feasible to analyze using the crystallographic data of Ni3Sn4 and Cu6Sn5 as substitutes.

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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.

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