We introduce the features of Cu wire bonding and the selection of cross-section preparation methods!
This document explains the bonding interface of Cu wire bonding in semiconductor packages. It details the purpose and wire bonding, the characteristics of Cu wire bonding, the Cu-Al compounds at the bonding center, micro voids, and the growth (diffusion) of Cu-Al compounds, accompanied by diagrams and photographs. [Contents (excerpt)] ■ Purpose and wire bonding ■ Samples and methods ■ Procedures and flow ■ Characteristics of Cu wire bonding ■ Selection of cross-sectional preparation methods *For more details, please refer to the PDF document or feel free to contact us.
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【Other Published Content (Excerpt)】 ■Confirmation of Coated Pd ■Observation of Cu Grains ■Confirmation of Cu-Al Compounds ■Confirmation of Oxide Film on Al Electrode ■Cu-Al Compounds and Micro Voids in the Joint Center ■Characteristic Arrangement of Compounds and Voids in the Joint Center ■Growth (Diffusion) of Cu-Al Compounds ■Observation of Al Bonding Surface After Package Opening *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.