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【BOURNS】Industry-leading high power efficiency and low switching loss.

Optimal for high voltage and high current applications. Current lead time is 24 weeks. [IGBT]

BOURNS has released an IGBT that combines a gate input with a MOS structure and a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operational characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. For sample requests, please feel free to contact our authorized distributor, Seiwa.

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IGBT Module X Series

Reduce power loss during inverter operation.

The "IGBT Module X Series" is a product that can reduce power loss during inverter operation compared to conventional products. By reducing power loss and also suppressing heat generation, it achieves approximately 36% miniaturization compared to conventional products. Additionally, through high-reliability, high-heat-resistant packaging and optimization of the chip, continuous operation at 175°C is realized. Please feel free to contact us if you have any inquiries. 【Features】 ■ Low loss ■ Miniaturization ■ High-temperature operation *For more details, please download the PDF or feel free to contact us.

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Bourns IGBT is ideal for high voltage and high current applications.

Industry-leading high power efficiency * low switching loss

BOURNS has released an IGBT that combines a MOS structure gate input with a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operating characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. <Features> - Discrete IGBT integrated with FRD - Advanced Trench Gate Field Stop (TGFS) technology - Low saturation voltage drop (V CE(sat)) - Low switching losses - TO252, TO247, TO247N packages - RoHS compliant - JEDEC standard compliant For sample requests, please feel free to contact our authorized distributor, Seiwa.

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