analysis(tem) - メーカー・企業と製品の一覧

analysisの製品一覧

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

  • Other analytical equipment

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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for Analysis - Backside Polishing - Supports various sample forms. Si chip size: 200um to 15mm square ■ Defective Area Identification - Backside IR-OBIRCH Analysis / Backside Emission Analysis - IR-OBIRCH Analysis: Supports up to 100mA/10V and 100uA/25V Emission Analysis: Supports up to 2kV * Covers a wide range of defect characteristics such as low-resistance shorts, micro-leaks, and high-voltage breakdown failures. ■ Pinpoint Cross-Section Observation of Leak Areas - SEM/TEM - Select SEM or TEM observation based on the predicted defects, allowing for pinpoint physical observation and elemental analysis of leak defect areas.

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Backside light emission analysis of SiC devices

Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device that has less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, damage to the SiO2 film and the SiC crystal was noted. *For more details, please refer to the PDF document or feel free to contact us.

  • Other analytical equipment

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Failure analysis of IC (integrated circuit)

Failure analysis of IC (integrated circuit)

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for different failure modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, starting with "Luminescence Analysis/OBIRCH Analysis," which allows for layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Luminescence Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Micro Probe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis for the faulty area!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu Office in 1993, we have cultivated our own unique analysis and analytical techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 - OBIRCH analysis supports not only Si but also SiC and GaN devices. - FIB processing is possible from either side. - Visualization of the depletion layer formed at the PN junction. - Elemental analysis such as EDS and EELS is also supported. *For more details, please refer to the PDF document or feel free to contact us.

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Narrowing down defective areas using the EBAC (Absorption Current) method.

Narrowing down defective areas using the EBAC (Absorption Current) method.

"SEM images" and "absorption current images (current sensing)" etc.! It identifies open defects in wiring and areas with high resistance defects.

Our company provides analysis and reliability evaluation services. In the "Narrowing Down Defective Areas Using the EBAC (Absorbed Current) Method," we identify open defects and high-resistance areas in wiring using the EBAC method with a nano-probe and high-sensitivity amplifier. By sensing the absorbed current as voltage, we can obtain a contrast based on the resistance voltage drop within the wiring, allowing us to detect high-resistance defects in TEGs such as via chains. [Analysis Examples Using the EBAC Method] ■ SEM Images ■ Overlaid Images ■ Absorbed Current Images (Current Sensing) ■ Absorbed Current Images (Voltage Sensing) *For more details, please refer to the PDF document or feel free to contact us.

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Specification verification and failure analysis through reliability testing.

Specification verification and failure analysis through reliability testing.

Analysis can be conducted on samples in various conditions thanks to our unique preprocessing technology!

Our company conducts consistent analysis from reliability testing to failure analysis. This allows us to confirm whether the samples meet the specifications, as well as to identify and observe the defective areas of failed samples. We propose and implement tests and analyses tailored to our customers' requests and objectives, assisting from cause investigation to problem resolution. Please feel free to contact us when you need our services. 【Analysis Flow】 ■ Specification confirmation of semiconductor devices through reliability testing ■ Identification of defective areas and observation of failure locations using TEM ・ Identification of defective areas through EMS/OBIRCH analysis ・ Observation of failure locations using TEM *For more details, please download the PDF or feel free to contact us.

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