Memory Product List and Ranking from 12 Manufacturers, Suppliers and Companies

Last Updated: Aggregation Period:Nov 05, 2025~Dec 02, 2025
This ranking is based on the number of page views on our site.

Memory Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Nov 05, 2025~Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. 光アルファクス Osaka//Trading company/Wholesale
  2. セイワ 東京本社、関西支社、名古屋営業所、中国無錫  グループ会社 エレクトロン(長野県松本市) Tokyo//Trading company/Wholesale
  3. RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました) Kanagawa//Information and Communications
  4. null/null
  5. 5 エムコマース Kanagawa//Information and Communications

Memory Product ranking

Last Updated: Aggregation Period:Nov 05, 2025~Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. KOWIN Corporation Memory 光アルファクス
  2. 【Longsys】microSD card/SSD * Affordable and high quality ◎ セイワ 東京本社、関西支社、名古屋営業所、中国無錫  グループ会社 エレクトロン(長野県松本市)
  3. Fingerprint authentication USB memory Biocryptodisk-ISPX エムコマース
  4. 4 [FIFO Memory] Lineup List
  5. 4 [Memory] Flash Memory Lineup List

Memory Product List

16~30 item / All 38 items

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Radiation-resistant stack memory for space applications

Widely adopted in space projects around the world!

We propose space-grade memory that achieves high density, high speed, and space-saving through our unique stacking technology.

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1.8V, 3.3V SLC Parallel NAND Flash

Erase old data while saving valid data! Reliable long-term performance.

We would like to introduce our "1.8V, 3.3V SLC Parallel NAND Flash AS9FxxG08SA." In response to the growing demand for legacy SLC parallel NAND flash memory products in the automotive, industrial, telecommunications, and consumer electronics markets, Alliance Memory has announced the new AS9F series of 1.8V and 3.3V devices with densities ranging from 1Gb to 8Gb. The block erase time has been shortened to a standard of up to 3ms. Please feel free to contact us if you have any inquiries. 【Features】 ■ 1.8V and 3.3V V CC ■ Densities from 1Gb to 8Gb ■ Block erase time is typically fast up to 3ms ■ Compliant with ONFI 1.0 specifications ■ x8 I/O interface *You can download the English version of the catalog. For more details, please feel free to contact us.

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32GB, 64GB, 128GB industrial-grade eMMC

The controller can be powered by a dual power supply voltage of 1.8V or 3V!

We would like to introduce our "32GB, 64GB, and 128GB industrial-grade eMMC." This device is designed for solid-state storage in consumer, industrial, and networking applications, integrating reliable TLC NAND flash memory, an eMMC controller, and flash translation layer (FTL) management software into a single 11.5mm x 13mm 153-ball FBGA package. Please feel free to contact us if you have any inquiries. 【Features】 ■ Equipped with high-reliability TLC NAND flash technology ■ Backward compatibility with eMMC v4.5 and v5.0 ■ Operates in an industrial temperature range of -40°C to +85°C ■ Offers programmable bus widths of x1, x4, and x8 ■ NAND memory with internal LDO can be driven by a single power supply voltage of 3V *You can download the English version of the catalog. For more details, please feel free to contact us.

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4Mb, 16Mb 3V Multi I/O NOR Flash Memory

Improve performance with high-speed reading, programming, and erasure times!

We would like to introduce our "4Mb, 16Mb 3V Multi-I/O NOR Flash Memory." The "4Mb AS25F304MD-10S1IN" and "16Mb AS25F316MQ-10S1IN" combine high-speed read performance of up to 104MHz with fast program and erase times of 1.1ms and 2.6ms, respectively. The maximum erase/program current is up to 1.3mA. The maximum read current is up to 3.7mA at 104MHz, designed to meet the demands of the computer, consumer, communication, and IoT markets. 【Advantages (partial)】 ■ Operates in Single, Dual, and Quad (AS25F316MQ-10S1IN) SPI modes ■ Reliable long-term performance with 100,000 program/erase cycles and 20 years of data retention ■ Uniform 4KB, 32KB, or 64KB erase ■ Pause and resume for program/erase *You can download the English version of the catalog. For more details, please feel free to contact us.

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KOWIN Corporation Memory

A memory-focused company under the Chinese major television brand KONKA Group.

A subsidiary of the major Chinese electronics manufacturer Konka, established in 1980. Founded in 2019, it specializes in the research, design, and sales of embedded storage, mobile storage, memory modules, and solid-state drives (SSDs).

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Information Memory VAM32 Network-Compatible General Type

The input condition number is 32 conditions, and it can store data for 100,000 variations.

The "Information Memory VAM32" is a device that records the operation of railway crossing equipment through relay contact input. With LAN communication, it is possible to remotely retrieve stored data. The external input connector remains unchanged from the conventional "VAM32," allowing for easy replacement. Our company utilizes the expertise in LED selection and circuit board layout developed through railway signal and display equipment to carry out development design and manufacturing (prototype mass production). We can solve your problems, such as "I want a warning device like this" or "Can you make something like this with LEDs?" so please feel free to contact us. 【Features】 ■ Remote retrieval of stored data via LAN communication ■ Can store data for 32 input conditions and 100,000 changes ■ Direct analysis on-site using existing "VAM32" analysis software *For more details, please download the PDF or feel free to contact us.

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Non-contact type level crossing memory

The installation is easy because the relay operation conditions are read by the current clamp sensor.

Our company offers the "Non-contact Level Crossing Memory," which allows for individual setting of crossing numbers, making data management easy. Even if the power is cut off, the memory content and built-in calendar clock can be backed up for up to 48 hours (when fully charged at room temperature). We utilize the technology developed through our experience with railway signals and displays for the selection of LEDs and circuit board layout in our development design and manufacturing (prototype mass production). We can solve your problems, such as "I want a warning device like this" or "Can you make something like this with LEDs?" so please feel free to contact us. 【Features】 ■ Easy installation due to the current clamp sensor that reads the conditions for relay operation ■ Space-saving installation due to the F-type relay shape ■ Automatic clock correction possible by connecting a timer automatic correction unit *For more details, please download the PDF or feel free to contact us.

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Ferroelectric non-volatile memory 'FeRAM'

High-quality, high-reliability memory with a rich track record of mass production.

FeRAM (Ferroelectric Random Access Memory) is a non-volatile memory with the characteristics of high-speed operation. It does not require battery backup for data retention and has advantages in terms of high-speed writing, high rewrite endurance, and low power consumption compared to other non-volatile memories such as EEPROM and flash memory. [Features] - Non-volatile: No battery backup required - High-speed writing: No erase operation needed - High rewrite endurance: Guaranteed for 10 trillion cycles (with some exceptions) *For more details, please download the PDF or feel free to contact us.

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System memory

Trust and Performance - High Quality, High Reliability Memory

Our company has been providing high-quality and high-performance memory LSI, which is essential for high-function electronic devices, for many years. In recent years, we have been offering memory products that are compact, high-performance, and low-power, as well as proposing optimal solutions that combine these memory products.

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[Information] Basics of FeRAM

Non-volatile memory that retains data even when the power is turned off! Introducing the basics of FeRAM.

"FeRAM" is a type of semiconductor memory, also known as ferroelectric memory, which is a non-volatile memory that retains data even when the power is turned off. This document introduces the "Basics of FeRAM." It includes an overview of "FeRAM," case studies of "FeRAM" business negotiations, "FeRAM" achievements, features of "FeRAM," and challenges and solutions. It is a useful book, and we encourage you to read it. [Contents] ■ Overview of FeRAM ■ Case studies of FeRAM business negotiations ■ Achievements of FeRAM ■ Features of FeRAM ■ Challenges and solutions *For more details, please refer to the PDF document or feel free to contact us.

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125℃ operating FeRAM family

FeRAM that has passed high-reliability evaluation to meet the automotive grade "High Quality Standard AEC-Q100 Grade 1."

Our company has responded to the demands of customers in the automotive and industrial sectors who require memory that guarantees operation in high-temperature environments by developing and providing automotive-grade FeRAM products since 2016. These products not only extend the operating temperature of conventional products to 125°C but also improve reliability by re-evaluating the design of the internal circuits. Furthermore, they comply with the AEC-Q100 reliability testing standards and support PPAP. In applications such as industrial machinery that incorporate motor mechanisms, electronic components that can guarantee operation in high-temperature environments are required due to heat generated by the motors. Our company offers high-reliability, high-performance FeRAM capable of operating at 125°C to meet the needs of these markets. **Features of 125°C Operating FeRAM:** - Clears high-reliability evaluations to meet the high-quality standard known as automotive grade AEC-Q100 Grade 1 - SPI interface - Memory capacity: from 64K bits to 4M bits *For more details on the product lineup, please visit the site below. Feel free to contact us with any inquiries.*

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