Memory Product List and Ranking from 12 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

Memory Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. 光アルファクス Osaka//Trading company/Wholesale
  2. 東邦電機工業 本社　相模工場　営業所（北海道・東北・東京・名古屋・大阪・四国・九州） Kanagawa//Building materials, supplies and fixtures manufacturers
  3. エムコマース Kanagawa//Information and Communications
  4. 4 null/null
  5. 5 音羽電機工業 Hyogo//Building materials, supplies and fixtures manufacturers
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Memory Product ranking

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. KOWIN Corporation Memory 光アルファクス
  2. Fingerprint authentication USB memory Biocryptodisk-ISPX エムコマース
  3. Thunder Memory OLM-2, OLM-2S, OLM-2C 音羽電機工業
  4. Information Memory VAM32II 東邦電機工業 本社　相模工場　営業所（北海道・東北・東京・名古屋・大阪・四国・九州）
  5. 4 Ferroelectric non-volatile memory 'FeRAM' RAMXEED （旧：富士通セミコンダクターメモリソリューション株式会社　2025/1/1に社名変更しました）

Memory Product List

16～30 item / All 38 items

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[Data] Case Studies of FeRAM Sales

[Data] Case Studies of FeRAM Sales

Introducing case studies of business negotiations for automotive, industrial (factory-related), and infrastructure sectors!

I would like to introduce the "FeRAM business case." In automotive applications such as car navigation systems and dash cameras, there is a demand for "continuous real-time data recording" in memory. The required features are high rewrite endurance, non-volatility, and fast write speeds. Our product is a memory that possesses these required features. "Want to frequently acquire data, but cannot due to memory rewrite limitations." "It is difficult to implement data protection measures during power interruptions or outages while writing data." If you have such challenges, please consider FeRAM. 【Business Case (Excerpt)】 <For Automotive Applications> ■ Requirements for Memory - Continuous real-time data recording / Data protection during accidents ■ Required Features - High rewrite endurance / Non-volatility / Fast write speeds *For more details, please refer to the PDF document or feel free to contact us.

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Non-volatile memory 'MB85R8M2TA'

Non-volatile memory 'MB85R8M2TA'

Developed an 8M-bit FeRAM that guarantees 100 trillion write cycles! Achieving high-speed operation and low power consumption.

The "MB85R8M2TA" is a parallel interface FeRAM that operates with a wide range power supply voltage of 1.8V to 3.6V. It achieves approximately 30% faster access speed compared to our conventional products, while reducing operating current by 10%, balancing high-speed operation with low power consumption. It is well-suited for industrial machinery that requires high-speed operation, where SRAM has traditionally been used. 【Features】 ■ High rewrite endurance (high number of rewrite guarantees) ■ High-speed writing ■ Low power consumption ■ Over 20 years of mass production experience *For more details, please refer to the PDF document or feel free to contact us.

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Non-volatile memory 'MB85RQ8MLX'

Non-volatile memory 'MB85RQ8MLX'

Developed a 8M-bit Quad SPI FeRAM capable of data rewriting at 54MB per second!

The MB85RQ8MLX is a non-volatile memory that achieves a bandwidth of 54MB/s, comparable to SRAM with an access time of 45ns, by incorporating a high-speed serial interface known as Quad SPI. It can replace parallel interface SRAM without compromising memory performance. Additionally, it allows for a significant reduction in pin count compared to traditional parallel interfaces, simplifying the wiring layout on the circuit board and contributing to BOM cost reduction. We are also developing an 8M-bit Quad SPI FeRAM (MB85RQ8MX) that operates at 3.3V (2.7V to 3.6V). 【Features】 - Bit configuration: 1,048,576 words × 8 bits - Operating frequency: 108MHz (single read using FSTRD command) - Write/read endurance: 10^13 times/byte - Data retention characteristics: 10 years (+105°C) - Operating current: 18mA @ Quad I/O 108MHz *For more details, please refer to the PDF document or feel free to contact us.

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Radiation-resistant stack memory for space applications

Radiation-resistant stack memory for space applications

Widely adopted in space projects around the world!

We propose space-grade memory that achieves high density, high speed, and space-saving through our unique stacking technology.

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1.8V, 3.3V SLC Parallel NAND Flash

1.8V, 3.3V SLC Parallel NAND Flash

Erase old data while saving valid data! Reliable long-term performance.

We would like to introduce our "1.8V, 3.3V SLC Parallel NAND Flash AS9FxxG08SA." In response to the growing demand for legacy SLC parallel NAND flash memory products in the automotive, industrial, telecommunications, and consumer electronics markets, Alliance Memory has announced the new AS9F series of 1.8V and 3.3V devices with densities ranging from 1Gb to 8Gb. The block erase time has been shortened to a standard of up to 3ms. Please feel free to contact us if you have any inquiries. 【Features】 ■ 1.8V and 3.3V V CC ■ Densities from 1Gb to 8Gb ■ Block erase time is typically fast up to 3ms ■ Compliant with ONFI 1.0 specifications ■ x8 I/O interface *You can download the English version of the catalog. For more details, please feel free to contact us.

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32GB, 64GB, 128GB industrial-grade eMMC

32GB, 64GB, 128GB industrial-grade eMMC

The controller can be powered by a dual power supply voltage of 1.8V or 3V!

We would like to introduce our "32GB, 64GB, and 128GB industrial-grade eMMC." This device is designed for solid-state storage in consumer, industrial, and networking applications, integrating reliable TLC NAND flash memory, an eMMC controller, and flash translation layer (FTL) management software into a single 11.5mm x 13mm 153-ball FBGA package. Please feel free to contact us if you have any inquiries. 【Features】 ■ Equipped with high-reliability TLC NAND flash technology ■ Backward compatibility with eMMC v4.5 and v5.0 ■ Operates in an industrial temperature range of -40°C to +85°C ■ Offers programmable bus widths of x1, x4, and x8 ■ NAND memory with internal LDO can be driven by a single power supply voltage of 3V *You can download the English version of the catalog. For more details, please feel free to contact us.

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4Mb, 16Mb 3V Multi I/O NOR Flash Memory

4Mb, 16Mb 3V Multi I/O NOR Flash Memory

Improve performance with high-speed reading, programming, and erasure times!

We would like to introduce our "4Mb, 16Mb 3V Multi-I/O NOR Flash Memory." The "4Mb AS25F304MD-10S1IN" and "16Mb AS25F316MQ-10S1IN" combine high-speed read performance of up to 104MHz with fast program and erase times of 1.1ms and 2.6ms, respectively. The maximum erase/program current is up to 1.3mA. The maximum read current is up to 3.7mA at 104MHz, designed to meet the demands of the computer, consumer, communication, and IoT markets. 【Advantages (partial)】 ■ Operates in Single, Dual, and Quad (AS25F316MQ-10S1IN) SPI modes ■ Reliable long-term performance with 100,000 program/erase cycles and 20 years of data retention ■ Uniform 4KB, 32KB, or 64KB erase ■ Pause and resume for program/erase *You can download the English version of the catalog. For more details, please feel free to contact us.

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KOWIN Corporation Memory

KOWIN Corporation Memory

A memory-focused company under the Chinese major television brand KONKA Group.

A subsidiary of the major Chinese electronics manufacturer Konka, established in 1980. Founded in 2019, it specializes in the research, design, and sales of embedded storage, mobile storage, memory modules, and solid-state drives (SSDs).

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Information Memory VAM32 Network-Compatible General Type

Information Memory VAM32 Network-Compatible General Type

The input condition number is 32 conditions, and it can store data for 100,000 variations.

The "Information Memory VAM32" is a device that records the operation of railway crossing equipment through relay contact input. With LAN communication, it is possible to remotely retrieve stored data. The external input connector remains unchanged from the conventional "VAM32," allowing for easy replacement. Our company utilizes the expertise in LED selection and circuit board layout developed through railway signal and display equipment to carry out development design and manufacturing (prototype mass production). We can solve your problems, such as "I want a warning device like this" or "Can you make something like this with LEDs?" so please feel free to contact us. 【Features】 ■ Remote retrieval of stored data via LAN communication ■ Can store data for 32 input conditions and 100,000 changes ■ Direct analysis on-site using existing "VAM32" analysis software *For more details, please download the PDF or feel free to contact us.

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Non-contact type level crossing memory

Non-contact type level crossing memory

The installation is easy because the relay operation conditions are read by the current clamp sensor.

Our company offers the "Non-contact Level Crossing Memory," which allows for individual setting of crossing numbers, making data management easy. Even if the power is cut off, the memory content and built-in calendar clock can be backed up for up to 48 hours (when fully charged at room temperature). We utilize the technology developed through our experience with railway signals and displays for the selection of LEDs and circuit board layout in our development design and manufacturing (prototype mass production). We can solve your problems, such as "I want a warning device like this" or "Can you make something like this with LEDs?" so please feel free to contact us. 【Features】 ■ Easy installation due to the current clamp sensor that reads the conditions for relay operation ■ Space-saving installation due to the F-type relay shape ■ Automatic clock correction possible by connecting a timer automatic correction unit *For more details, please download the PDF or feel free to contact us.

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Ferroelectric non-volatile memory 'FeRAM'

Ferroelectric non-volatile memory 'FeRAM'

High-quality, high-reliability memory with a rich track record of mass production.

FeRAM (Ferroelectric Random Access Memory) is a non-volatile memory with the characteristics of high-speed operation. It does not require battery backup for data retention and has advantages in terms of high-speed writing, high rewrite endurance, and low power consumption compared to other non-volatile memories such as EEPROM and flash memory. [Features] - Non-volatile: No battery backup required - High-speed writing: No erase operation needed - High rewrite endurance: Guaranteed for 10 trillion cycles (with some exceptions) *For more details, please download the PDF or feel free to contact us.

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