Tohoku Univ. Technology： Single-crystal aluminum nitride seed crystal：T21-263
Able to create AlN seed crystal at low temperature, easy temperature control and fast growth rate
Deep ultraviolet light emitting device (DUV-LED) is fabricated from AlGaN-based nitride semiconductor. The substrate material for the AlGaN-based DUV-LED is required to have high lattice matching with AlGaN, wider band gap than AlGaN and high thermal conductivity. Aluminum nitride (AlN) is attracting attention since it satisfies those conditions. The sublimation method is a conventional method for producing AlN single crystal, but the cost is high because of high temperature requirement, and temperature control is also difficult. Using this technology, single-crystal AlN seed crystal can be created at a relatively high speed under low-temperature and easy temperature control conditions.
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The revenue generated from technology transfer is reinvested into universities and researchers as new research funding, which is used to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will actively promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by concluding basic technology transfer agreements with the following universities (as of June 1, 2025): - Tohoku University - Hirosaki University - Iwate University - Akita University - Fukushima University - Yamagata University - Tohoku Gakuin University - Iwate Medical University - Fukushima Medical University - Aizu University - Miyagi University - Hokkaido University - Muroran Institute of Technology - Showa Medical University
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