Introduction to Particle-PLUS Analysis Case: "Plasma Analysis of Dual Frequency CCP" Simulation Case
This is a case study on plasma analysis of CCP (Capacitively Coupled Plasma) devices. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform high-speed simulations even when multiple electrodes are present or when applying overlapping frequencies. ◇ Features of 'Particle-PLUS' - Excels in low-pressure plasma analysis. - By combining axisymmetric models with mirror-symmetric boundary conditions, it can quickly obtain results without the need for full device simulations. - Specializes in plasma simulations for low-pressure gases, where calculations using fluid models are challenging. - Supports 2D (two-dimensional) and 3D (three-dimensional) analyses, efficiently handling complex models. - As a strength of our in-house developed software, customization to fit the customer's device is also possible. ◆ Various calculation results can be output ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the wall - Energy spectrum of electrons and ions at the wall - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *For more details, please feel free to contact us.
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basic information
**Features** - The time scheme uses an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in devices such as magnetron sputtering systems, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
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Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to obtain high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage for efficient material sputtering 【Ion Implantation】 - Influence of the substrate on erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - Enables observation of physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for optimization of high-density plasma generation at low power
Detailed information
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This is a case study on plasma analysis of CCP (Capacitively Coupled Plasma) devices. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform high-speed simulations even in cases with multiple electrodes or when applying overlapping frequencies.
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◇Model Overview Conducted plasma analysis of 2-frequency CCP using an axisymmetric model.
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Electric potential - Since the electron speed is considerably faster than the ion speed, ions are left behind in the plasma, resulting in a slight positive charge in the plasma. - Due to the self-bias effect, the electrodes are negatively charged. The high-frequency side has a self-bias of about -20 V, while the low-frequency side has a self-bias of about -150 V.
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Transition of Particles - Change in particle number over time: It reaches a steady state in about 1×10^(−5) seconds, achieving a balance between the generation and annihilation of plasma particles. - Time variation of accumulated charge: It can be inferred that ions are left behind in the chamber, causing the plasma charge to be positively biased.
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Particle number density Electron number density (periodic average) Ar ion number density (periodic average)
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Ar ion flux Ar ion number flux (time-averaged) Ar ion energy flux (time-averaged) In Particle-PLUS, these flux distributions can be used to calculate the sputtering phenomenon.
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Our company develops and sells a "Maintenance Management System" for managing and operating various plants, factories, and other facilities and assets. Currently, this system is undergoing significant evolution into a system that incorporates IoT technologies, such as sensor information and input from tablet devices, as well as AI technologies like machine learning, featuring functions for failure prediction and automatic scheduling. Additionally, as part of the recent trend of digital transformation (DX), there is a growing movement to digitize and automate manufacturing processes and research and development sites in factories to improve operational efficiency. In line with this trend, our company provides a solution aimed at enhancing efficiency in research and development environments, which is the Laboratory Information Management System (LIMS). This software includes features such as workflow management, data tracking, data management, data analysis, and integration of electronic lab notebooks.