[Example] 3D Analysis of the "Particle-PLUS" CCP Device

basic information

**Features** - The time scheme uses an implicit method, allowing for stable time evolution to be calculated over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling rapid assessment of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*

Price range

Delivery Time

P4

Applications/Examples of results

【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to the chamber walls - Optimization of power using an external circuit model - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and realistically - Calculations are relatively stable to avoid applying excessive voltage 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for the optimization of high-density plasma generation at low power

Detailed information

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  Three-dimensional analysis model of capacitively coupled plasma (CCP)

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  Electric potential

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  Particle number density

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  Energy distribution

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  Particle flux on the electrode