Chipization of high-frequency devices (GaNonSiC, GaAs)
Due to the dry process, no water is used, making it environmentally friendly. Achieves increased productivity with zero car flows. Compared to conventional methods, it reduces the footprint.
Samsung Diamond Industry utilizes its unique technology, the SnB "Scribe & Break" method, to precisely cut and process device substrates with metal films or silicone resins layered on materials such as silicon carbide (SiC), gallium nitride (GaN), alumina (Al2O3), sapphire, silicon nitride (Si3N4), and silicon (Si) since its establishment. With MDI's proprietary SnB "Scribe & Break" technology, we achieve zero kerf loss, high speed, high quality, and completely dry processing. This leads to increased product yield and reduced tact time, enhancing productivity, while being environmentally friendly due to the absence of water use, allowing for a reduction in production costs. **Features of MDI's proprietary SnB (Scribe & Break) technology:** - Stable and high-speed cutting processing for high-frequency and power devices! - High-precision and high-quality cutting processing enables reduction of street width and accommodates small sizes! - Compatible with various semiconductor/electronic component processing! - Supports multilayer composite materials! We propose optimal processing methods based on years of accumulated know-how and theoretical simulations. *For more details, please download the catalog or contact us directly.*
- 企業：三星ダイヤモンド工業
- 価格：Other
